External quantum efficiency of monolayer MoTe2 based near-infrared light emitting diodes

Jiabin Feng, Yongzhuo Li, Song Fu, Zhang Jianxing, Zizhao Zhong, Hao Sun, Lin Gan, C. Z. Ning

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

We demonstrated a monolayer MoTe2 based near-IR light emitting diode on SiO2/Si substrate and determined for the first time the external quantum efficiency of the device in the range of 10-4 ~ 5×10-3 at 5~300K.

Original languageEnglish (US)
Title of host publicationCLEO
Subtitle of host publicationScience and Innovations, CLEO_SI 2019
PublisherOSA - The Optical Society
ISBN (Print)9781943580576
DOIs
StatePublished - 2019
EventCLEO: Science and Innovations, CLEO_SI 2019 - San Jose, United States
Duration: May 5 2019May 10 2019

Publication series

NameOptics InfoBase Conference Papers
VolumePart F129-CLEO_SI 2019

Conference

ConferenceCLEO: Science and Innovations, CLEO_SI 2019
Country/TerritoryUnited States
CitySan Jose
Period5/5/195/10/19

ASJC Scopus subject areas

  • Mechanics of Materials
  • Electronic, Optical and Magnetic Materials

Fingerprint

Dive into the research topics of 'External quantum efficiency of monolayer MoTe<sub>2</sub> based near-infrared light emitting diodes'. Together they form a unique fingerprint.

Cite this