External cavity mid-infrared semiconductor lasers

Han Q. Le; George W. Turner; Juan R. Ochoa; M. J. Manfra; C. C. Cook; Yong-Hang Zhang

External cavity mid-infrared semiconductor lasers

Han Q. Le, George W. Turner, Juan R. Ochoa, M. J. Manfra, C. C. Cook, Yong-Hang Zhang

Engineering, Ira A. Fulton Schools of (IAFSE)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

15 Scopus citations

Abstract

GaSb-based and InAs-based semiconductor gain media with band-edge wavelengths between 3.3 to 4 μm were used in grating-tuned external cavity configuration. Output wavelength was tuned up to approximately 9.5% of the center wavelength; and power from few tens of mW to 0.2-W peak, 20- mW average was achieved at 80 K operation. The tuning range is approximately 2 - 3 times wider than those of near-IR semiconductor lasers, as expected for mid-IR semiconductors which have smaller electron masses. The external cavity laser had a multimode linewidth of 1 - 2 nm, which was approximately 10 to 20 times narrower than that of a free running laser. Analysis of the gain/loss spectral properties indicates that the tuning range is still severely limited by facet anti-reflection coating and non-optimal wafer structure. Model calculation indicates a tuning range a few times larger is possible with more optimal wafer design.

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Editors	Hong K. Choi, Peter S. Zory
Place of Publication	Bellingham, WA, United States
Publisher	Society of Photo-Optical Instrumentation Engineers
Pages	298-308
Number of pages	11
Volume	3001
ISBN (Print)	0819424129
State	Published - 1997
Event	In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared - San Jose, CA, USA Duration: Feb 10 1997 → Feb 13 1997

Other

Other	In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared
City	San Jose, CA, USA
Period	2/10/97 → 2/13/97

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics
Applied Mathematics
Computer Science Applications
Electronic, Optical and Magnetic Materials

Cite this

External cavity mid-infrared semiconductor lasers. / Le, Han Q.; Turner, George W.; Ochoa, Juan R. et al.
Proceedings of SPIE - The International Society for Optical Engineering. ed. / Hong K. Choi; Peter S. Zory. Vol. 3001 Bellingham, WA, United States: Society of Photo-Optical Instrumentation Engineers, 1997. p. 298-308.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Le, HQ, Turner, GW, Ochoa, JR, Manfra, MJ, Cook, CC & Zhang, Y-H 1997, External cavity mid-infrared semiconductor lasers. in HK Choi & PS Zory (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 3001, Society of Photo-Optical Instrumentation Engineers, Bellingham, WA, United States, pp. 298-308, In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, San Jose, CA, USA, 2/10/97.

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title = "External cavity mid-infrared semiconductor lasers",

abstract = "GaSb-based and InAs-based semiconductor gain media with band-edge wavelengths between 3.3 to 4 μm were used in grating-tuned external cavity configuration. Output wavelength was tuned up to approximately 9.5% of the center wavelength; and power from few tens of mW to 0.2-W peak, 20- mW average was achieved at 80 K operation. The tuning range is approximately 2 - 3 times wider than those of near-IR semiconductor lasers, as expected for mid-IR semiconductors which have smaller electron masses. The external cavity laser had a multimode linewidth of 1 - 2 nm, which was approximately 10 to 20 times narrower than that of a free running laser. Analysis of the gain/loss spectral properties indicates that the tuning range is still severely limited by facet anti-reflection coating and non-optimal wafer structure. Model calculation indicates a tuning range a few times larger is possible with more optimal wafer design.",

author = "Le, {Han Q.} and Turner, {George W.} and Ochoa, {Juan R.} and Manfra, {M. J.} and Cook, {C. C.} and Yong-Hang Zhang",

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booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

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note = "In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared ; Conference date: 10-02-1997 Through 13-02-1997",

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T1 - External cavity mid-infrared semiconductor lasers

AU - Le, Han Q.

AU - Turner, George W.

AU - Ochoa, Juan R.

AU - Manfra, M. J.

AU - Cook, C. C.

AU - Zhang, Yong-Hang

PY - 1997

Y1 - 1997

N2 - GaSb-based and InAs-based semiconductor gain media with band-edge wavelengths between 3.3 to 4 μm were used in grating-tuned external cavity configuration. Output wavelength was tuned up to approximately 9.5% of the center wavelength; and power from few tens of mW to 0.2-W peak, 20- mW average was achieved at 80 K operation. The tuning range is approximately 2 - 3 times wider than those of near-IR semiconductor lasers, as expected for mid-IR semiconductors which have smaller electron masses. The external cavity laser had a multimode linewidth of 1 - 2 nm, which was approximately 10 to 20 times narrower than that of a free running laser. Analysis of the gain/loss spectral properties indicates that the tuning range is still severely limited by facet anti-reflection coating and non-optimal wafer structure. Model calculation indicates a tuning range a few times larger is possible with more optimal wafer design.

AB - GaSb-based and InAs-based semiconductor gain media with band-edge wavelengths between 3.3 to 4 μm were used in grating-tuned external cavity configuration. Output wavelength was tuned up to approximately 9.5% of the center wavelength; and power from few tens of mW to 0.2-W peak, 20- mW average was achieved at 80 K operation. The tuning range is approximately 2 - 3 times wider than those of near-IR semiconductor lasers, as expected for mid-IR semiconductors which have smaller electron masses. The external cavity laser had a multimode linewidth of 1 - 2 nm, which was approximately 10 to 20 times narrower than that of a free running laser. Analysis of the gain/loss spectral properties indicates that the tuning range is still severely limited by facet anti-reflection coating and non-optimal wafer structure. Model calculation indicates a tuning range a few times larger is possible with more optimal wafer design.

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BT - Proceedings of SPIE - The International Society for Optical Engineering

A2 - Choi, Hong K.

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CY - Bellingham, WA, United States

T2 - In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared

Y2 - 10 February 1997 through 13 February 1997

ER -

External cavity mid-infrared semiconductor lasers

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ASJC Scopus subject areas

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