Exploring spin transfer torque devices for unconventional computing

Kaushik Roy, Deliang Fan, Xuanyao Fong, Yusung Kim, Somnath Paul, Subho Chatterjee, Swarup Bhunia, Saibal Mukhopadhyay

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

This paper reviews the potential of spin-transfer torque devices as an alternative to complementary metal-oxide-semiconductor for non-von Neumann and non-Boolean computing. Recent experiments on spin-transfer torque devices have demonstrated high-speed magnetization switching of nanoscale magnets with small current densities. Coupled with other properties, such as nonvolatility, zero leakage current, high integration density, we discuss that the spin-transfer torque devices can be inherently suitable for some unconventional computing models for information processing. We review several spintronic devices in which magnetization can be manipulated by current induced spin transfer torque and explore their applications in neuromorphic computing and reconfigurable memory-based computing.

Original languageEnglish (US)
Article number7055378
Pages (from-to)5-16
Number of pages12
JournalIEEE Journal on Emerging and Selected Topics in Circuits and Systems
Volume5
Issue number1
DOIs
StatePublished - Mar 1 2015
Externally publishedYes

Keywords

  • Domain wall motion
  • in-memory computing
  • magnetic tunnel junction
  • neuromorphic computing
  • spin torque oscillator
  • spin transfer torque

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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