Exploring aberration-corrected electron microscopy for compound semiconductors

David Smith; Toshihiro Aoki; John Mardinly; Lin Zhou; Martha McCartney

doi:10.1093/jmicro/dft011

Exploring aberration-corrected electron microscopy for compound semiconductors

David Smith, Toshihiro Aoki, John Mardinly, Lin Zhou, Martha McCartney

Research output: Contribution to journal › Review article › peer-review

11 Scopus citations

Abstract

The development of aberration-corrected electron microscopes (ACEMs) has made it possible to resolve individual atomic columns ('dumbbells') with correct interatomic spacings in elemental and compound semiconductors. Thus, the latest generations of ACEMs should become powerful instruments for determining detailed structural arrangements at defects and interfaces in these materials. This paper provides a short overview of off-line ('software') and on-line ('hardware') ACEM techniques, with particular reference to characterization of elemental and compound semiconductors. Exploratory probe-corrected studies of ZnTe/InP and ZnTe/GaAs epitaxial heterostructures and interfacial defects are also described. Finally, some of the associated problems and future prospects are briefly discussed.

Original language	English (US)
Pages (from-to)	S65-S73
Journal	Journal of Electron Microscopy
Volume	62
Issue number	SUPPL.1
DOIs	https://doi.org/10.1093/jmicro/dft011
State	Published - Jun 2013

Keywords

aberration-corrected electron microscopy
compound semiconductor
dumbbell imaging
polarity reversal

ASJC Scopus subject areas

Instrumentation

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10.1093/jmicro/dft011

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title = "Exploring aberration-corrected electron microscopy for compound semiconductors",

abstract = "The development of aberration-corrected electron microscopes (ACEMs) has made it possible to resolve individual atomic columns ('dumbbells') with correct interatomic spacings in elemental and compound semiconductors. Thus, the latest generations of ACEMs should become powerful instruments for determining detailed structural arrangements at defects and interfaces in these materials. This paper provides a short overview of off-line ('software') and on-line ('hardware') ACEM techniques, with particular reference to characterization of elemental and compound semiconductors. Exploratory probe-corrected studies of ZnTe/InP and ZnTe/GaAs epitaxial heterostructures and interfacial defects are also described. Finally, some of the associated problems and future prospects are briefly discussed.",

keywords = "aberration-corrected electron microscopy, compound semiconductor, dumbbell imaging, polarity reversal",

author = "David Smith and Toshihiro Aoki and John Mardinly and Lin Zhou and Martha McCartney",

note = "Funding Information: The acquisition of the JEM-ARM 200F at Arizona State University was supported by NSF Grant DMR-0821796.",

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doi = "10.1093/jmicro/dft011",

language = "English (US)",

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T1 - Exploring aberration-corrected electron microscopy for compound semiconductors

AU - Smith, David

AU - Aoki, Toshihiro

AU - Mardinly, John

AU - Zhou, Lin

AU - McCartney, Martha

N1 - Funding Information: The acquisition of the JEM-ARM 200F at Arizona State University was supported by NSF Grant DMR-0821796.

PY - 2013/6

Y1 - 2013/6

N2 - The development of aberration-corrected electron microscopes (ACEMs) has made it possible to resolve individual atomic columns ('dumbbells') with correct interatomic spacings in elemental and compound semiconductors. Thus, the latest generations of ACEMs should become powerful instruments for determining detailed structural arrangements at defects and interfaces in these materials. This paper provides a short overview of off-line ('software') and on-line ('hardware') ACEM techniques, with particular reference to characterization of elemental and compound semiconductors. Exploratory probe-corrected studies of ZnTe/InP and ZnTe/GaAs epitaxial heterostructures and interfacial defects are also described. Finally, some of the associated problems and future prospects are briefly discussed.

AB - The development of aberration-corrected electron microscopes (ACEMs) has made it possible to resolve individual atomic columns ('dumbbells') with correct interatomic spacings in elemental and compound semiconductors. Thus, the latest generations of ACEMs should become powerful instruments for determining detailed structural arrangements at defects and interfaces in these materials. This paper provides a short overview of off-line ('software') and on-line ('hardware') ACEM techniques, with particular reference to characterization of elemental and compound semiconductors. Exploratory probe-corrected studies of ZnTe/InP and ZnTe/GaAs epitaxial heterostructures and interfacial defects are also described. Finally, some of the associated problems and future prospects are briefly discussed.

KW - aberration-corrected electron microscopy

KW - compound semiconductor

KW - dumbbell imaging

KW - polarity reversal

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Exploring aberration-corrected electron microscopy for compound semiconductors

Abstract

Keywords

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