Exploiting the metal-insulator transition of VO2 thin films for terahertz wave modulation and switching

Md Nadim Ferdous Hoque; Gulten Karaoglan-Bebek; Mark Holtz; Ayrton A. Bemussi; Zhaoyang Fan

doi:10.1557/opl.2015.594

Exploiting the metal-insulator transition of VO₂ thin films for terahertz wave modulation and switching

Md Nadim Ferdous Hoque, Gulten Karaoglan-Bebek, Mark Holtz, Ayrton A. Bemussi, Zhaoyang Fan

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

VO₂ is one of the very few natural materials that can be used to modulate terahertz (THz) radiations. A 100-nm thick VO₂, when in its metallic phase, has a charge density of more than ∼ 10¹⁵ cm^-2 which will strongly reflect and absorb the THz radiation; while in its insulator state, the charge density is lowered by several orders of magnitude to be THz transparent. Therefore, exploiting the metal-insulator transition of VO₂ is a potential approach to modulate or even switch THz radiation for THz optics. Here we report that VO₂ epitaxial thin films on sapphire substrate exhibits 85% amplitude modulation depth in a broad bandwidth, while this value can be improved to 95% when VO₂ film is coated on both sides of a substrate. We further demonstrate that with wafer bonding, 4-layered VO₂ thin films exhibit a transmittance as low as -20 dB to -30 dB at their metallic state, enough for switching applications. We also report our proof-of-concept demonstration of THz spatial light modulator that exhibits amplitude modulation as large as 96%, -30 dB pixel-to-pixel crosstalk, and a broad THz bandwidth.

Original language	English (US)
Title of host publication	2015 Materials Research Society Symposium Proceedings
Subtitle of host publication	Fabrication and Properties of Oxide Thin Films, Nanostructures and Interfaces for Advanced Applications
Editors	J. Augustynski, F. Grosse, D. Kumar, F. Sanchez, C. Santato, X.W. Sun, A. Vomiero, T. Yamamoto
Publisher	Materials Research Society
Pages	55-60
Number of pages	6
Volume	1805
ISBN (Electronic)	9781510872325
DOIs	https://doi.org/10.1557/opl.2015.594
State	Published - 2015
Externally published	Yes
Event	2015 MRS Spring Meeting on Fabrication and Properties of Oxide Thin Films, Nanostructures and Interfaces for Advanced Applications - San Francisco, United States Duration: Apr 6 2015 → Apr 10 2015

Conference

Conference	2015 MRS Spring Meeting on Fabrication and Properties of Oxide Thin Films, Nanostructures and Interfaces for Advanced Applications
Country/Territory	United States
City	San Francisco
Period	4/6/15 → 4/10/15

ASJC Scopus subject areas

Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
General Materials Science

Access to Document

10.1557/opl.2015.594

Cite this

Ferdous Hoque, M. N., Karaoglan-Bebek, G., Holtz, M., Bemussi, A. A., & Fan, Z. (2015). Exploiting the metal-insulator transition of VO₂ thin films for terahertz wave modulation and switching. In J. Augustynski, F. Grosse, D. Kumar, F. Sanchez, C. Santato, X. W. Sun, A. Vomiero, & T. Yamamoto (Eds.), 2015 Materials Research Society Symposium Proceedings: Fabrication and Properties of Oxide Thin Films, Nanostructures and Interfaces for Advanced Applications (Vol. 1805, pp. 55-60). Materials Research Society. https://doi.org/10.1557/opl.2015.594

Exploiting the metal-insulator transition of VO₂ thin films for terahertz wave modulation and switching. / Ferdous Hoque, Md Nadim; Karaoglan-Bebek, Gulten; Holtz, Mark et al.
2015 Materials Research Society Symposium Proceedings: Fabrication and Properties of Oxide Thin Films, Nanostructures and Interfaces for Advanced Applications. ed. / J. Augustynski; F. Grosse; D. Kumar; F. Sanchez; C. Santato; X.W. Sun; A. Vomiero; T. Yamamoto. Vol. 1805 Materials Research Society, 2015. p. 55-60.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ferdous Hoque, MN, Karaoglan-Bebek, G, Holtz, M, Bemussi, AA & Fan, Z 2015, Exploiting the metal-insulator transition of VO₂ thin films for terahertz wave modulation and switching. in J Augustynski, F Grosse, D Kumar, F Sanchez, C Santato, XW Sun, A Vomiero & T Yamamoto (eds), 2015 Materials Research Society Symposium Proceedings: Fabrication and Properties of Oxide Thin Films, Nanostructures and Interfaces for Advanced Applications. vol. 1805, Materials Research Society, pp. 55-60, 2015 MRS Spring Meeting on Fabrication and Properties of Oxide Thin Films, Nanostructures and Interfaces for Advanced Applications, San Francisco, United States, 4/6/15. https://doi.org/10.1557/opl.2015.594

Ferdous Hoque MN, Karaoglan-Bebek G, Holtz M, Bemussi AA, Fan Z. Exploiting the metal-insulator transition of VO₂ thin films for terahertz wave modulation and switching. In Augustynski J, Grosse F, Kumar D, Sanchez F, Santato C, Sun XW, Vomiero A, Yamamoto T, editors, 2015 Materials Research Society Symposium Proceedings: Fabrication and Properties of Oxide Thin Films, Nanostructures and Interfaces for Advanced Applications. Vol. 1805. Materials Research Society. 2015. p. 55-60 doi: 10.1557/opl.2015.594

Ferdous Hoque, Md Nadim ; Karaoglan-Bebek, Gulten ; Holtz, Mark et al. / Exploiting the metal-insulator transition of VO₂ thin films for terahertz wave modulation and switching. 2015 Materials Research Society Symposium Proceedings: Fabrication and Properties of Oxide Thin Films, Nanostructures and Interfaces for Advanced Applications. editor / J. Augustynski ; F. Grosse ; D. Kumar ; F. Sanchez ; C. Santato ; X.W. Sun ; A. Vomiero ; T. Yamamoto. Vol. 1805 Materials Research Society, 2015. pp. 55-60

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abstract = "VO2 is one of the very few natural materials that can be used to modulate terahertz (THz) radiations. A 100-nm thick VO2, when in its metallic phase, has a charge density of more than ∼ 1015 cm-2 which will strongly reflect and absorb the THz radiation; while in its insulator state, the charge density is lowered by several orders of magnitude to be THz transparent. Therefore, exploiting the metal-insulator transition of VO2 is a potential approach to modulate or even switch THz radiation for THz optics. Here we report that VO2 epitaxial thin films on sapphire substrate exhibits 85% amplitude modulation depth in a broad bandwidth, while this value can be improved to 95% when VO2 film is coated on both sides of a substrate. We further demonstrate that with wafer bonding, 4-layered VO2 thin films exhibit a transmittance as low as -20 dB to -30 dB at their metallic state, enough for switching applications. We also report our proof-of-concept demonstration of THz spatial light modulator that exhibits amplitude modulation as large as 96%, -30 dB pixel-to-pixel crosstalk, and a broad THz bandwidth.",

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