Exploiting NbOx metal-insulator-transition device as oscillation neuron for neuro-inspired computing

Ligang Gao, Pai Yu Chen, Shimeng Yu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

Abstract

In this work, we fabricated the Pt/NbOx/Pt MIT device showing threshold switching. XPS results revealed that there are mixed NbO2 and Nb2O5 phases in the NbOx thin film. The self-oscillation of NbOx device with a resistor has been demonstrated, showing its feasibility as an oscillation neuron.

Original languageEnglish (US)
Title of host publication2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages152-153
Number of pages2
ISBN (Electronic)9781509046591
DOIs
StatePublished - Jun 13 2017
Event2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Toyama, Japan
Duration: Feb 28 2017Mar 2 2017

Other

Other2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017
CountryJapan
CityToyama
Period2/28/173/2/17

Keywords

  • Metal-insulator-transition
  • NbO
  • neuro-inspired computing
  • neuron
  • oscillation

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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