Exploiting NbOx metal-insulator-transition device as oscillation neuron for neuro-inspired computing

Ligang Gao; Pai Yu Chen; Shimeng Yu

doi:10.1109/EDTM.2017.7947555

Exploiting NbO_x metal-insulator-transition device as oscillation neuron for neuro-inspired computing

Ligang Gao, Pai Yu Chen, Shimeng Yu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

8 Scopus citations

Abstract

In this work, we fabricated the Pt/NbO_x/Pt MIT device showing threshold switching. XPS results revealed that there are mixed NbO₂ and Nb₂O₅ phases in the NbO_x thin film. The self-oscillation of NbO_x device with a resistor has been demonstrated, showing its feasibility as an oscillation neuron.

Original language	English (US)
Title of host publication	2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	152-153
Number of pages	2
ISBN (Electronic)	9781509046591
DOIs	https://doi.org/10.1109/EDTM.2017.7947555
State	Published - Jun 13 2017
Event	2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Toyama, Japan Duration: Feb 28 2017 → Mar 2 2017

Publication series

Name	2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings

Other

Other	2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017
Country/Territory	Japan
City	Toyama
Period	2/28/17 → 3/2/17

Keywords

Metal-insulator-transition
NbO
neuro-inspired computing
neuron
oscillation

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/EDTM.2017.7947555

Cite this

Gao, L., Chen, P. Y., & Yu, S. (2017). Exploiting NbO_x metal-insulator-transition device as oscillation neuron for neuro-inspired computing. In 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings (pp. 152-153). Article 7947555 (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2017.7947555

Exploiting NbO_x metal-insulator-transition device as oscillation neuron for neuro-inspired computing. / Gao, Ligang; Chen, Pai Yu; Yu, Shimeng.
2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. p. 152-153 7947555 (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Gao, L, Chen, PY & Yu, S 2017, Exploiting NbO_x metal-insulator-transition device as oscillation neuron for neuro-inspired computing. in 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings., 7947555, 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 152-153, 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017, Toyama, Japan, 2/28/17. https://doi.org/10.1109/EDTM.2017.7947555

Gao L, Chen PY, Yu S. Exploiting NbO_x metal-insulator-transition device as oscillation neuron for neuro-inspired computing. In 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2017. p. 152-153. 7947555. (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings). doi: 10.1109/EDTM.2017.7947555

Gao, Ligang ; Chen, Pai Yu ; Yu, Shimeng. / Exploiting NbO_x metal-insulator-transition device as oscillation neuron for neuro-inspired computing. 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 152-153 (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings).

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