Experimentally measured input referred voltage offsets and kickback noise in RHBD analog comparator arrays

Nathan D. Hindman; Ziyan Wang; Lawrence T. Clark; David Allee

doi:10.1109/TNS.2007.908654

Experimentally measured input referred voltage offsets and kickback noise in RHBD analog comparator arrays

Nathan D. Hindman, Ziyan Wang, Lawrence T. Clark, David Allee

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Analog comparator arrays fabricated on a bulk CMOS 130-nm are measured to quantify input-referred offsets due to transistor variation and kickback noise. Comparators using RHBD edgeless and conventional two-edge transistors are compared to determine the impact on the circuit behavior. Both random variation and kickback noise are slightly larger than for an equivalent design using two-edge transistors. The input-referred offsets are shown to be completely systematic.

Original language	English (US)
Pages (from-to)	2073-2079
Number of pages	7
Journal	IEEE Transactions on Nuclear Science
Volume	54
Issue number	6
DOIs	https://doi.org/10.1109/TNS.2007.908654
State	Published - Dec 2007

Keywords

Analog comparator offset
Analog-to-digital converters
Integrated circuit radiation effects
Kickback noise
Radiation hardening

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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10.1109/TNS.2007.908654

Cite this

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title = "Experimentally measured input referred voltage offsets and kickback noise in RHBD analog comparator arrays",

abstract = "Analog comparator arrays fabricated on a bulk CMOS 130-nm are measured to quantify input-referred offsets due to transistor variation and kickback noise. Comparators using RHBD edgeless and conventional two-edge transistors are compared to determine the impact on the circuit behavior. Both random variation and kickback noise are slightly larger than for an equivalent design using two-edge transistors. The input-referred offsets are shown to be completely systematic.",

keywords = "Analog comparator offset, Analog-to-digital converters, Integrated circuit radiation effects, Kickback noise, Radiation hardening",

author = "Hindman, {Nathan D.} and Ziyan Wang and Clark, {Lawrence T.} and David Allee",

note = "Funding Information: Manuscript received July 20, 2007; revised August 28, 2007. This work was supported by the Defense Threat Reduction Agency under Contract N00164-02-D-6599. The authors are with the Department of Electrical Engineering, Arizona State University, Tempe, AZ 85287 USA (e-mail: nathan.hindman@asu.edu; ziyan. wang@asu.edu; lawrence.clark@asu.edu; david.allee@asu.edu). Digital Object Identifier 10.1109/TNS.2007.908654",

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doi = "10.1109/TNS.2007.908654",

language = "English (US)",

volume = "54",

pages = "2073--2079",

journal = "IEEE Transactions on Nuclear Science",

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AU - Hindman, Nathan D.

AU - Wang, Ziyan

AU - Clark, Lawrence T.

AU - Allee, David

N1 - Funding Information: Manuscript received July 20, 2007; revised August 28, 2007. This work was supported by the Defense Threat Reduction Agency under Contract N00164-02-D-6599. The authors are with the Department of Electrical Engineering, Arizona State University, Tempe, AZ 85287 USA (e-mail: nathan.hindman@asu.edu; ziyan. wang@asu.edu; lawrence.clark@asu.edu; david.allee@asu.edu). Digital Object Identifier 10.1109/TNS.2007.908654

PY - 2007/12

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N2 - Analog comparator arrays fabricated on a bulk CMOS 130-nm are measured to quantify input-referred offsets due to transistor variation and kickback noise. Comparators using RHBD edgeless and conventional two-edge transistors are compared to determine the impact on the circuit behavior. Both random variation and kickback noise are slightly larger than for an equivalent design using two-edge transistors. The input-referred offsets are shown to be completely systematic.

AB - Analog comparator arrays fabricated on a bulk CMOS 130-nm are measured to quantify input-referred offsets due to transistor variation and kickback noise. Comparators using RHBD edgeless and conventional two-edge transistors are compared to determine the impact on the circuit behavior. Both random variation and kickback noise are slightly larger than for an equivalent design using two-edge transistors. The input-referred offsets are shown to be completely systematic.

KW - Analog comparator offset

KW - Analog-to-digital converters

KW - Integrated circuit radiation effects

KW - Kickback noise

KW - Radiation hardening

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Experimentally measured input referred voltage offsets and kickback noise in RHBD analog comparator arrays

Abstract

Keywords

ASJC Scopus subject areas

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