@inproceedings{50f26d6da4ad4ee7864c1df3ec9e0a70,
title = "Experimental validation of self-heating simulations and projections for transistors in deeply scaled nodes",
abstract = "CMOS device improvements have recently been achieved by changing the geometry of the device from planar to fully-depleted (FD) FinFET. Also FD SOI (Silicon-on-Isolator) devices have emerged as a candidate for replacing bulk silicon in ULSI applications in future technology nodes. Along with this scaling comes, however, a challenging penalty: device self-heating. In this study, i) we propose a unique measurement technique for self-heating and use it to assess self-heating in planar devices, ii) we compare and verify these results with finite-element simulations and iii) we provide perspectives for upcoming FinFET nodes.",
keywords = "EKV, FinFET, SHE, reliability, self-heating",
author = "E. Bury and B. Kaczer and P. Roussel and R. Ritzenthaler and K. Raleva and Dragica Vasileska and G. Groeseneken",
year = "2014",
month = jan,
day = "1",
doi = "10.1109/IRPS.2014.6861186",
language = "English (US)",
isbn = "9781479933167",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "XT.8.1--XT.8.6",
booktitle = "2014 IEEE International Reliability Physics Symposium, IRPS 2014",
note = "52nd IEEE International Reliability Physics Symposium, IRPS 2014 ; Conference date: 01-06-2014 Through 05-06-2014",
}