Experimental study of plane electrode thickness scaling for 3D vertical resistive random access memory

Hong Yu Chen, Shimeng Yu, Bin Gao, Rui Liu, Zizhen Jiang, Yexin Deng, Bing Chen, Jinfeng Kang, H. S. Philip Wong

Research output: Contribution to journalArticle

22 Scopus citations

Abstract

The vertical scaling for the multi-layer stacked 3D vertical resistive random access memory (RRAM) cross-point array is investigated. The thickness of the multi-layer stack for a 3D RRAM is a key factor for determining the storage density. A vertical RRAM cell with plane electrode thickness (tm) scaled down to 5 nm, aiming to minimize 3D stack height, is experimentally demonstrated. An improvement factor of 5 in device density can be achieved as compared to a previous demonstration using a 22 nm thick plane electrode. It is projected that 37 layers can be stacked for a lithographic half-pitch (F) = 26 nm and total thickness of one stack (T) = 21 nm, delivering a bit density of 72.8 nm2/cell.

Original languageEnglish (US)
Article number465201
JournalNanotechnology
Volume24
Issue number46
DOIs
StatePublished - Nov 22 2013

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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    Chen, H. Y., Yu, S., Gao, B., Liu, R., Jiang, Z., Deng, Y., Chen, B., Kang, J., & Philip Wong, H. S. (2013). Experimental study of plane electrode thickness scaling for 3D vertical resistive random access memory. Nanotechnology, 24(46), [465201]. https://doi.org/10.1088/0957-4484/24/46/465201