Abstract
The vertical scaling for the multi-layer stacked 3D vertical resistive random access memory (RRAM) cross-point array is investigated. The thickness of the multi-layer stack for a 3D RRAM is a key factor for determining the storage density. A vertical RRAM cell with plane electrode thickness (tm) scaled down to 5 nm, aiming to minimize 3D stack height, is experimentally demonstrated. An improvement factor of 5 in device density can be achieved as compared to a previous demonstration using a 22 nm thick plane electrode. It is projected that 37 layers can be stacked for a lithographic half-pitch (F) = 26 nm and total thickness of one stack (T) = 21 nm, delivering a bit density of 72.8 nm2/cell.
Original language | English (US) |
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Article number | 465201 |
Journal | Nanotechnology |
Volume | 24 |
Issue number | 46 |
DOIs | |
State | Published - Nov 22 2013 |
ASJC Scopus subject areas
- Bioengineering
- General Chemistry
- General Materials Science
- Mechanics of Materials
- Mechanical Engineering
- Electrical and Electronic Engineering