Experimental observation of sequential tunneling transport in GaN/AlGaN coupled quantum wells grown on a free-standing GaN substrate

Faisal Sudradjat, Kristina Driscoll, Yitao Liao, Anirban Bhattacharyya, Christos Thomidis, Lin Zhou, David Smith, Theodore D. Moustakas, Roberto Paiella

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A GaN/AlGaN multiple-quantum-well structure based on an asymmetric triple-quantum-well repeat unit was grown by molecular beam epitaxy, and its vertical electrical transport characteristics were investigated as a function of temperature. To minimize the density of dislocations and other structural defects providing leakage current paths, homoepitaxial growth on a free-standing GaN substrate was employed. The measured vertical-transport current-voltage characteristics were found to be highly nonlinear, especially at low temperatures, consistent with sequential tunneling through the ground-state subbands of weakly coupled adjacent quantum wells. Furthermore, different turn-on voltages were measured depending on the polarity of the applied bias, in accordance with the asymmetric subband structure of the sample repeat units.

Original languageEnglish (US)
Title of host publicationIII-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions
Pages99-104
Number of pages6
StatePublished - Jul 7 2010
Event2009 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 30 2009Dec 2 2009

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1202
ISSN (Print)0272-9172

Other

Other2009 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period11/30/0912/2/09

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Sudradjat, F., Driscoll, K., Liao, Y., Bhattacharyya, A., Thomidis, C., Zhou, L., Smith, D., Moustakas, T. D., & Paiella, R. (2010). Experimental observation of sequential tunneling transport in GaN/AlGaN coupled quantum wells grown on a free-standing GaN substrate. In III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions (pp. 99-104). (Materials Research Society Symposium Proceedings; Vol. 1202).