Experimental measurement of lateral transport in the inversion layer of silicon heterojunction solar cells

Hal S. Emmer, Michael G. Deceglie, Zachary C. Holman, Antoine Descoeudres, Stefaan De Wolf, Christophe Ballif, Harry A. Atwater

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

We performed two experiments to measure lateral flow of photoexcited charge carriers near the heterointerface in silicon heterojunction (SHJ) solar cells. Using light beam methods, we probed current extraction differences between areas of varying intrinsic layer thickness and the effective cross section of junction defects. Both measurements demonstrated a strong bias voltage dependence of lateral transport and transport lengths of tens to hundreds of microns as bias approached operating voltages. Lateral carrier flow near the heterointerface is proposed as one of the reasons that SHJ solar cells are extremely sensitive to interfacial defects.

Original languageEnglish (US)
Title of host publication39th IEEE Photovoltaic Specialists Conference, PVSC 2013
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1229-1231
Number of pages3
ISBN (Print)9781479932993
DOIs
StatePublished - 2013
Externally publishedYes
Event39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States
Duration: Jun 16 2013Jun 21 2013

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Country/TerritoryUnited States
CityTampa, FL
Period6/16/136/21/13

Keywords

  • Heterojunctions
  • Photovoltaic cells
  • Silicon

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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