Experimental measurement of lateral transport in the inversion layer of silicon heterojunction solar cells

Hal S. Emmer, Michael G. Deceglie, Zachary Holman, Antoine Descoeudres, Stefaan De Wolf, Christophe Ballif, Harry A. Atwater

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We performed two experiments to measure lateral flow of photoexcited charge carriers near the heterointerface in silicon heterojunction (SHJ) solar cells. Using light beam methods, we probed current extraction differences between areas of varying intrinsic layer thickness and the effective cross section of junction defects. Both measurements demonstrated a strong bias voltage dependence of lateral transport and transport lengths of tens to hundreds of microns as bias approached operating voltages. Lateral carrier flow near the heterointerface is proposed as one of the reasons that SHJ solar cells are extremely sensitive to interfacial defects.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1229-1231
Number of pages3
ISBN (Print)9781479932993
DOIs
StatePublished - 2013
Externally publishedYes
Event39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States
Duration: Jun 16 2013Jun 21 2013

Other

Other39th IEEE Photovoltaic Specialists Conference, PVSC 2013
CountryUnited States
CityTampa, FL
Period6/16/136/21/13

Fingerprint

Inversion layers
Heterojunctions
Solar cells
Silicon
Defects
Bias voltage
Charge carriers
Electric potential
Experiments

Keywords

  • Heterojunctions
  • Photovoltaic cells
  • Silicon

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

Cite this

Emmer, H. S., Deceglie, M. G., Holman, Z., Descoeudres, A., De Wolf, S., Ballif, C., & Atwater, H. A. (2013). Experimental measurement of lateral transport in the inversion layer of silicon heterojunction solar cells. In Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 1229-1231). [6744362] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2013.6744362

Experimental measurement of lateral transport in the inversion layer of silicon heterojunction solar cells. / Emmer, Hal S.; Deceglie, Michael G.; Holman, Zachary; Descoeudres, Antoine; De Wolf, Stefaan; Ballif, Christophe; Atwater, Harry A.

Conference Record of the IEEE Photovoltaic Specialists Conference. Institute of Electrical and Electronics Engineers Inc., 2013. p. 1229-1231 6744362.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Emmer, HS, Deceglie, MG, Holman, Z, Descoeudres, A, De Wolf, S, Ballif, C & Atwater, HA 2013, Experimental measurement of lateral transport in the inversion layer of silicon heterojunction solar cells. in Conference Record of the IEEE Photovoltaic Specialists Conference., 6744362, Institute of Electrical and Electronics Engineers Inc., pp. 1229-1231, 39th IEEE Photovoltaic Specialists Conference, PVSC 2013, Tampa, FL, United States, 6/16/13. https://doi.org/10.1109/PVSC.2013.6744362
Emmer HS, Deceglie MG, Holman Z, Descoeudres A, De Wolf S, Ballif C et al. Experimental measurement of lateral transport in the inversion layer of silicon heterojunction solar cells. In Conference Record of the IEEE Photovoltaic Specialists Conference. Institute of Electrical and Electronics Engineers Inc. 2013. p. 1229-1231. 6744362 https://doi.org/10.1109/PVSC.2013.6744362
Emmer, Hal S. ; Deceglie, Michael G. ; Holman, Zachary ; Descoeudres, Antoine ; De Wolf, Stefaan ; Ballif, Christophe ; Atwater, Harry A. / Experimental measurement of lateral transport in the inversion layer of silicon heterojunction solar cells. Conference Record of the IEEE Photovoltaic Specialists Conference. Institute of Electrical and Electronics Engineers Inc., 2013. pp. 1229-1231
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