Experimental evidence of the structure of annihilation of antiphase boundaries in GaAs on Si

S. I. Molina, G. Aragón, Y. González, L. González, F. Briones, Fernando Ponce, R. García

Research output: Contribution to journalArticle

Abstract

A high-resolution electron microscopy (HREM) study on antiphase boundaries in GaAs grown on Si is presented. HREM images of two close antiphase boundaries appearing mainly on the {110} planes which abruptly disappear suggest some ideas on the mechanisms of annihilation of these defects.

Original languageEnglish (US)
Pages (from-to)353-355
Number of pages3
JournalMaterials Letters
Volume15
Issue number5-6
DOIs
StatePublished - 1993
Externally publishedYes

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antiphase boundaries
High resolution electron microscopy
electron microscopy
high resolution
Defects
defects
gallium arsenide

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Molina, S. I., Aragón, G., González, Y., González, L., Briones, F., Ponce, F., & García, R. (1993). Experimental evidence of the structure of annihilation of antiphase boundaries in GaAs on Si. Materials Letters, 15(5-6), 353-355. https://doi.org/10.1016/0167-577X(93)90094-E

Experimental evidence of the structure of annihilation of antiphase boundaries in GaAs on Si. / Molina, S. I.; Aragón, G.; González, Y.; González, L.; Briones, F.; Ponce, Fernando; García, R.

In: Materials Letters, Vol. 15, No. 5-6, 1993, p. 353-355.

Research output: Contribution to journalArticle

Molina, SI, Aragón, G, González, Y, González, L, Briones, F, Ponce, F & García, R 1993, 'Experimental evidence of the structure of annihilation of antiphase boundaries in GaAs on Si', Materials Letters, vol. 15, no. 5-6, pp. 353-355. https://doi.org/10.1016/0167-577X(93)90094-E
Molina, S. I. ; Aragón, G. ; González, Y. ; González, L. ; Briones, F. ; Ponce, Fernando ; García, R. / Experimental evidence of the structure of annihilation of antiphase boundaries in GaAs on Si. In: Materials Letters. 1993 ; Vol. 15, No. 5-6. pp. 353-355.
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