Abstract
The lattice parameter of Ge films doped with phosphorus, arsenic, and antimony was measured as a function of the dopant concentration. When the observed trends are compared with similar measurements in doped Si, a clear pattern emerges in support of the Cargill-Keyes theory that computes the doping dependence of the lattice parameter as the sum of a purely electronic contribution, proportional to the absolute deformation potential for the states occupied by the dopant carriers, plus a size mismatch contribution that depends on the universal topological rigidity parameter for Si-Ge systems. It is shown that when considered from the same global perspective, ab initio calculations of the structural effects of doping are in remarkable agreement with the Cargill-Keyes theory.
| Original language | English (US) |
|---|---|
| Article number | 041201 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 93 |
| Issue number | 4 |
| DOIs | |
| State | Published - Jan 8 2016 |
Fingerprint
ASJC Scopus subject areas
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials
Cite this
Experimental doping dependence of the lattice parameter in n -type Ge : Identifying the correct theoretical framework by comparison with Si. / Xu, Chi; Senaratne, C. L.; Kouvetakis, John; Menendez, Jose.
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 93, No. 4, 041201, 08.01.2016.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Experimental doping dependence of the lattice parameter in n -type Ge
T2 - Identifying the correct theoretical framework by comparison with Si
AU - Xu, Chi
AU - Senaratne, C. L.
AU - Kouvetakis, John
AU - Menendez, Jose
PY - 2016/1/8
Y1 - 2016/1/8
N2 - The lattice parameter of Ge films doped with phosphorus, arsenic, and antimony was measured as a function of the dopant concentration. When the observed trends are compared with similar measurements in doped Si, a clear pattern emerges in support of the Cargill-Keyes theory that computes the doping dependence of the lattice parameter as the sum of a purely electronic contribution, proportional to the absolute deformation potential for the states occupied by the dopant carriers, plus a size mismatch contribution that depends on the universal topological rigidity parameter for Si-Ge systems. It is shown that when considered from the same global perspective, ab initio calculations of the structural effects of doping are in remarkable agreement with the Cargill-Keyes theory.
AB - The lattice parameter of Ge films doped with phosphorus, arsenic, and antimony was measured as a function of the dopant concentration. When the observed trends are compared with similar measurements in doped Si, a clear pattern emerges in support of the Cargill-Keyes theory that computes the doping dependence of the lattice parameter as the sum of a purely electronic contribution, proportional to the absolute deformation potential for the states occupied by the dopant carriers, plus a size mismatch contribution that depends on the universal topological rigidity parameter for Si-Ge systems. It is shown that when considered from the same global perspective, ab initio calculations of the structural effects of doping are in remarkable agreement with the Cargill-Keyes theory.
UR - http://www.scopus.com/inward/record.url?scp=84955442273&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84955442273&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.93.041201
DO - 10.1103/PhysRevB.93.041201
M3 - Article
AN - SCOPUS:84955442273
VL - 93
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 0163-1829
IS - 4
M1 - 041201
ER -