Experimental doping dependence of the lattice parameter in n -type Ge: Identifying the correct theoretical framework by comparison with Si

Chi Xu, C. L. Senaratne, John Kouvetakis, Jose Menendez

Research output: Contribution to journalArticle

21 Scopus citations

Abstract

The lattice parameter of Ge films doped with phosphorus, arsenic, and antimony was measured as a function of the dopant concentration. When the observed trends are compared with similar measurements in doped Si, a clear pattern emerges in support of the Cargill-Keyes theory that computes the doping dependence of the lattice parameter as the sum of a purely electronic contribution, proportional to the absolute deformation potential for the states occupied by the dopant carriers, plus a size mismatch contribution that depends on the universal topological rigidity parameter for Si-Ge systems. It is shown that when considered from the same global perspective, ab initio calculations of the structural effects of doping are in remarkable agreement with the Cargill-Keyes theory.

Original languageEnglish (US)
Article number041201
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume93
Issue number4
DOIs
StatePublished - Jan 8 2016

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

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