Abstract
The experimentally measured pressure dependence of the Au/[n-type GaAs] barrier height, 9.5 meV/kbar, is consistent with the theoretically calculated value for an interface with a high concentration of As antisite defects while it is inconsistent with the calculated value for an ideal interface. This is conclusive evidence that Fermi-level pinning is dominated by defects at a metal/semiconductor interface, whereas the pressure dependence of the Al/[n-type GaAs] barrier height, 10.5 meV/kbar, is consistent with the prediction of an ideal interface.
Original language | English (US) |
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Pages (from-to) | 18003-18006 |
Number of pages | 4 |
Journal | Physical Review B |
Volume | 51 |
Issue number | 24 |
DOIs | |
State | Published - 1995 |
Externally published | Yes |
ASJC Scopus subject areas
- Condensed Matter Physics