Experimental determination of the pressure dependence of the barrier height of metal/[n-type GaAs] Schottky contacts: A critical test of Schottky-barrier models

P. Phatak, Nathan Newman, P. Dreszer, E. R. Weber

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

The experimentally measured pressure dependence of the Au/[n-type GaAs] barrier height, 9.5 meV/kbar, is consistent with the theoretically calculated value for an interface with a high concentration of As antisite defects while it is inconsistent with the calculated value for an ideal interface. This is conclusive evidence that Fermi-level pinning is dominated by defects at a metal/semiconductor interface, whereas the pressure dependence of the Al/[n-type GaAs] barrier height, 10.5 meV/kbar, is consistent with the prediction of an ideal interface.

Original languageEnglish (US)
Pages (from-to)18003-18006
Number of pages4
JournalPhysical Review B
Volume51
Issue number24
DOIs
StatePublished - 1995
Externally publishedYes

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pressure dependence
electric contacts
Metals
Defects
Fermi level
metals
Semiconductor materials
antisite defects
gallium arsenide
defects
predictions

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Experimental determination of the pressure dependence of the barrier height of metal/[n-type GaAs] Schottky contacts : A critical test of Schottky-barrier models. / Phatak, P.; Newman, Nathan; Dreszer, P.; Weber, E. R.

In: Physical Review B, Vol. 51, No. 24, 1995, p. 18003-18006.

Research output: Contribution to journalArticle

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