Experimental and theoretical verification of the presence of inversion region in a-Si/c-Si heterojunction solar cells with an intrinsic layer

Kunal Ghosh, Clarence Tracy, Stuart Bowden

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

Photovoltaic devices based on amorphous silicon (a-Si)/ crystalline silicon (c-Si) heterostructure exhibits excellent surface passivation with the highest open circuit voltage being reported on these devices. A plausible explanation for these devices to show low recombination is that the junction is induced in c-Si and an inversion region is present at the heterointerface. In this work, the presence of the inversion region at the heterointerface between intrinsic a-Si and c-Si is theoretically shown by a computer model developed in the commercial simulator Sentaurus and experimentally corroborated by lateral conductance measurement technique.

Original languageEnglish (US)
Title of host publicationProgram - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Pages1046-1048
Number of pages3
DOIs
StatePublished - 2012
Event38th IEEE Photovoltaic Specialists Conference, PVSC 2012 - Austin, TX, United States
Duration: Jun 3 2012Jun 8 2012

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Country/TerritoryUnited States
CityAustin, TX
Period6/3/126/8/12

Keywords

  • a-Si/c-Si heterostructure
  • inversion
  • lateral conductance

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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