@inproceedings{53f7cf0db5664822bf8e29efc772ea9b,
title = "Experimental and theoretical verification of the presence of inversion region in a-Si/c-Si heterojunction solar cells with an intrinsic layer",
abstract = "Photovoltaic devices based on amorphous silicon (a-Si)/ crystalline silicon (c-Si) heterostructure exhibits excellent surface passivation with the highest open circuit voltage being reported on these devices. A plausible explanation for these devices to show low recombination is that the junction is induced in c-Si and an inversion region is present at the heterointerface. In this work, the presence of the inversion region at the heterointerface between intrinsic a-Si and c-Si is theoretically shown by a computer model developed in the commercial simulator Sentaurus and experimentally corroborated by lateral conductance measurement technique.",
keywords = "a-Si/c-Si heterostructure, inversion, lateral conductance",
author = "Kunal Ghosh and Clarence Tracy and Stuart Bowden",
year = "2012",
doi = "10.1109/PVSC.2012.6317782",
language = "English (US)",
isbn = "9781467300643",
series = "Conference Record of the IEEE Photovoltaic Specialists Conference",
pages = "1046--1048",
booktitle = "Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012",
note = "38th IEEE Photovoltaic Specialists Conference, PVSC 2012 ; Conference date: 03-06-2012 Through 08-06-2012",
}