Exciton freeze-out and thermally activated relaxation at local potential fluctuations in thick Al xGa 1-xN layers

A. Bell, S. Srinivasan, C. Plumlee, H. Omiya, Fernando Ponce, J. Christen, S. Tanaka, A. Fujioka, Y. Nakagawa

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127 Scopus citations

Abstract

The Al xGa 1-xN layers with 0.05≤x≤0.25 were discussed using spectrally and time resolved cathodoluminescence. An s-shaped temperature dependence characterisitc of disordered systems was exhibited by the near-band-edge peak emission energy. The shift in the luminescence peak position with respect to the usual temperature dependence of the band gap was quantified. Analysis shows that at elevated temperatures, when the excitons were delocalized, the decay was significantly faster.

Original languageEnglish (US)
Pages (from-to)4670-4674
Number of pages5
JournalJournal of Applied Physics
Volume95
Issue number9
DOIs
StatePublished - May 1 2004

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Bell, A., Srinivasan, S., Plumlee, C., Omiya, H., Ponce, F., Christen, J., Tanaka, S., Fujioka, A., & Nakagawa, Y. (2004). Exciton freeze-out and thermally activated relaxation at local potential fluctuations in thick Al xGa 1-xN layers. Journal of Applied Physics, 95(9), 4670-4674. https://doi.org/10.1063/1.1689736