Exciton freeze-out and thermally activated relaxation at local potential fluctuations in thick Al xGa 1-xN layers

A. Bell; S. Srinivasan; C. Plumlee; H. Omiya; Fernando Ponce; J. Christen; S. Tanaka; A. Fujioka; Y. Nakagawa

doi:10.1063/1.1689736

Exciton freeze-out and thermally activated relaxation at local potential fluctuations in thick Al _xGa _1-xN layers

A. Bell, S. Srinivasan, C. Plumlee, H. Omiya, Fernando Ponce, J. Christen, S. Tanaka, A. Fujioka, Y. Nakagawa

Physics

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131 Scopus citations

Abstract

The Al _xGa _1-xN layers with 0.05≤x≤0.25 were discussed using spectrally and time resolved cathodoluminescence. An s-shaped temperature dependence characterisitc of disordered systems was exhibited by the near-band-edge peak emission energy. The shift in the luminescence peak position with respect to the usual temperature dependence of the band gap was quantified. Analysis shows that at elevated temperatures, when the excitons were delocalized, the decay was significantly faster.

Original language	English (US)
Pages (from-to)	4670-4674
Number of pages	5
Journal	Journal of Applied Physics
Volume	95
Issue number	9
DOIs	https://doi.org/10.1063/1.1689736
State	Published - May 1 2004

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General Physics and Astronomy

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title = "Exciton freeze-out and thermally activated relaxation at local potential fluctuations in thick Al xGa 1-xN layers",

abstract = "The Al xGa 1-xN layers with 0.05≤x≤0.25 were discussed using spectrally and time resolved cathodoluminescence. An s-shaped temperature dependence characterisitc of disordered systems was exhibited by the near-band-edge peak emission energy. The shift in the luminescence peak position with respect to the usual temperature dependence of the band gap was quantified. Analysis shows that at elevated temperatures, when the excitons were delocalized, the decay was significantly faster.",

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T1 - Exciton freeze-out and thermally activated relaxation at local potential fluctuations in thick Al xGa 1-xN layers

AU - Bell, A.

AU - Srinivasan, S.

AU - Plumlee, C.

AU - Omiya, H.

AU - Ponce, Fernando

AU - Christen, J.

AU - Tanaka, S.

AU - Fujioka, A.

AU - Nakagawa, Y.

PY - 2004/5/1

Y1 - 2004/5/1

N2 - The Al xGa 1-xN layers with 0.05≤x≤0.25 were discussed using spectrally and time resolved cathodoluminescence. An s-shaped temperature dependence characterisitc of disordered systems was exhibited by the near-band-edge peak emission energy. The shift in the luminescence peak position with respect to the usual temperature dependence of the band gap was quantified. Analysis shows that at elevated temperatures, when the excitons were delocalized, the decay was significantly faster.

AB - The Al xGa 1-xN layers with 0.05≤x≤0.25 were discussed using spectrally and time resolved cathodoluminescence. An s-shaped temperature dependence characterisitc of disordered systems was exhibited by the near-band-edge peak emission energy. The shift in the luminescence peak position with respect to the usual temperature dependence of the band gap was quantified. Analysis shows that at elevated temperatures, when the excitons were delocalized, the decay was significantly faster.

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EP - 4674

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9

ER -

Exciton freeze-out and thermally activated relaxation at local potential fluctuations in thick Al _xGa _1-xN layers

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