Excited-state-donor to acceptor transitions in the photoluminescence spectrum of GaAs and InP

Brian Skromme, G. E. Stillman

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

In addition to the normally observed conduction-band to acceptor and ground-state-donor to acceptor transition peaks in the low-temperature photoluminescence spectrum of high-purity GaAs and InP, we report for the first time the observation of an additional peak in the spectrum, which we attribute to transitions from donors in their first excited state to neutral acceptors. This peak appears between the normally observed conduction-band to acceptor (e-A0) and ground-state-donor to acceptor (Dn=10-A0) peaks. The theory of Kamiya and Wagner is generalized to include this process and predicts line shapes in excellent agreement with experiment.

Original languageEnglish (US)
Pages (from-to)1982-1992
Number of pages11
JournalPhysical Review B
Volume29
Issue number4
DOIs
StatePublished - 1984
Externally publishedYes

Fingerprint

Electron transitions
Conduction bands
Excited states
Ground state
Photoluminescence
photoluminescence
excitation
conduction bands
ground state
line shape
purity
Experiments
Temperature
gallium arsenide

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Excited-state-donor to acceptor transitions in the photoluminescence spectrum of GaAs and InP. / Skromme, Brian; Stillman, G. E.

In: Physical Review B, Vol. 29, No. 4, 1984, p. 1982-1992.

Research output: Contribution to journalArticle

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