Excitation dependent photoluminescence measurements of the nonradiative lifetime and quantum efficiency in GaAs

Shane Johnson, D. Ding, J. B. Wang, S. Q. Yu, Yong-Hang Zhang

Research output: Contribution to journalArticlepeer-review

30 Scopus citations

Abstract

The nonradiative lifetime and spontaneous emission quantum efficiency in molecular-beam epitaxy grown bulk GaAs is determined using injection level dependent photoluminescence (PL) measurements. These measurements were performed at temperatures of 300, 230, 100, and 50 K using a HeNe pump laser with powers ranging from 0.3 to 40 mW. The quantum efficiency and lifetime is inferred from the power law relation linking pump power and integrated PL signal that is predicted by the rate equations. The nonradiative lifetime for bulk GaAs is determined to be 0.3 μs, with an additional temperature dependent component attributed to the AlGaAs barriers that rapidly reduces the nonradiative lifetime at temperatures above 230 K. The peak quantum efficiency is > 0.96 at 300 K and > 0.99 at temperatures below 230 K.

Original languageEnglish (US)
Pages (from-to)1077-1082
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume25
Issue number3
DOIs
StatePublished - 2007

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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