Excimer-laser-induced crystallization of hydrogenated amorphous silicon

K. Winer, G. B. Anderson, S. E. Ready, R. Z. Bachrach, R. I. Johnson, F. A. Ponce, J. B. Boyce

Research output: Contribution to journalArticlepeer-review

38 Scopus citations

Abstract

The electronic transport properties and structural morphology of fast-pulse excimer-laser- crystallized hydrogenated amorphous silicon (a-Si:H) thin films have been measured. The room-temperature dark dc conductivities and Hall mobilities increase by several orders of magnitude at well-defined laser energy density thresholds which decrease as the impurity concentration in the films increases. The structural morphology of the films suggests an impurity-induced reduction of the a-Si:H melt temperature as the origin of this behavior.

Original languageEnglish (US)
Pages (from-to)2222-2224
Number of pages3
JournalApplied Physics Letters
Volume57
Issue number21
DOIs
StatePublished - Dec 1 1990
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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