Exchange effects in hot plasmas in semiconductors

A. M. Kriman, R. P. Joshi, M. J. Kann, D. K. Ferry

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We describe a many-body semiclassical approximation for simulating electronic motion. Semiclassical trajectories in this approach are determined from spin-dependent forces and effective mass corrections, which incorporate effects of Heisenberg uncertainty, and the Pauli repulsion and exchange interactions of fermion statistics. The method has been implemented jointly with an ensemble Monte Carlo treatment of phonon scattering, and numerical simulations performed for GaAs. Numerical results indicate that in the femtosecond-scale relaxation of laser-excited plasmas, quantum corrections to the electronic motion will become significant for excitation densities above 2 × 1018 cm-3.

Original languageEnglish (US)
JournalSemiconductor Science and Technology
Volume7
Issue number3 B
StatePublished - Mar 1992
Externally publishedYes

Fingerprint

Phonon scattering
Fermions
Exchange interactions
high temperature plasmas
Trajectories
Statistics
Semiconductor materials
Plasmas
Lasers
Computer simulation
electronics
fermions
statistics
trajectories
approximation
scattering
excitation
lasers
simulation
interactions

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Kriman, A. M., Joshi, R. P., Kann, M. J., & Ferry, D. K. (1992). Exchange effects in hot plasmas in semiconductors. Semiconductor Science and Technology, 7(3 B).

Exchange effects in hot plasmas in semiconductors. / Kriman, A. M.; Joshi, R. P.; Kann, M. J.; Ferry, D. K.

In: Semiconductor Science and Technology, Vol. 7, No. 3 B, 03.1992.

Research output: Contribution to journalArticle

Kriman, AM, Joshi, RP, Kann, MJ & Ferry, DK 1992, 'Exchange effects in hot plasmas in semiconductors', Semiconductor Science and Technology, vol. 7, no. 3 B.
Kriman AM, Joshi RP, Kann MJ, Ferry DK. Exchange effects in hot plasmas in semiconductors. Semiconductor Science and Technology. 1992 Mar;7(3 B).
Kriman, A. M. ; Joshi, R. P. ; Kann, M. J. ; Ferry, D. K. / Exchange effects in hot plasmas in semiconductors. In: Semiconductor Science and Technology. 1992 ; Vol. 7, No. 3 B.
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