Exchange effects in hot plasmas in semiconductors

A. M. Kriman, R. P. Joshi, M. J. Kann, D. K. Ferry

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

The authors describe a many-body semiclassical approximation for simulating electronic motion. Semiclassical trajectories in this approach are determined from spin-dependent forces and effective mass corrections, which incorporate effects of Heisenberg uncertainty, and the Pauli repulsion and exchange interactions of fermion statistics. The method has been implemented jointly with an ensemble Monte Carlo treatment of phonon scattering, and numerical simulations performed for GaAs. Numerical results indicate that in the femtosecond-scale relaxation of laser-excited plasmas, quantum corrections to the electronic motion will become significant for excitation densities above 2*1018 cm-3.

Original languageEnglish (US)
Article number058
Pages (from-to)B243-B247
JournalSemiconductor Science and Technology
Volume7
Issue number3 B
DOIs
StatePublished - Dec 1 1992

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Kriman, A. M., Joshi, R. P., Kann, M. J., & Ferry, D. K. (1992). Exchange effects in hot plasmas in semiconductors. Semiconductor Science and Technology, 7(3 B), B243-B247. [058]. https://doi.org/10.1088/0268-1242/7/3B/058