Abstract

We report the observation of an exchange biasing of ferromagnetic Cr-doped GaN films by an antiferromagnetic MnO overlayer. The center of the magnetic hysteresis loop shifts to a negative magnetic field by ∼70 Oe when measured after a positive field cooling. An enhancement of the coercive field of the Cr-doped GaN film is also found when the exchange-biasing MnO overlayer is present. The mechanism responsible for the exchange bias is attributed to the exchange coupling at the ferromagnetic Cr-GaNantiferromagnetic MnO interface.

Original languageEnglish (US)
Article number046106
JournalJournal of Applied Physics
Volume98
Issue number4
DOIs
StatePublished - Aug 15 2005

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hysteresis
cooling
augmentation
shift
magnetic fields

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Exchange biasing of ferromagnetic Cr-doped GaN using a MnO overlayer. / Liu, H. X.; Wu, Stephen Y.; Singh, Rakesh; Newman, Nathan.

In: Journal of Applied Physics, Vol. 98, No. 4, 046106, 15.08.2005.

Research output: Contribution to journalArticle

Liu, H. X. ; Wu, Stephen Y. ; Singh, Rakesh ; Newman, Nathan. / Exchange biasing of ferromagnetic Cr-doped GaN using a MnO overlayer. In: Journal of Applied Physics. 2005 ; Vol. 98, No. 4.
@article{0d9a456bfc324b87b9470f65a0b6c403,
title = "Exchange biasing of ferromagnetic Cr-doped GaN using a MnO overlayer",
abstract = "We report the observation of an exchange biasing of ferromagnetic Cr-doped GaN films by an antiferromagnetic MnO overlayer. The center of the magnetic hysteresis loop shifts to a negative magnetic field by ∼70 Oe when measured after a positive field cooling. An enhancement of the coercive field of the Cr-doped GaN film is also found when the exchange-biasing MnO overlayer is present. The mechanism responsible for the exchange bias is attributed to the exchange coupling at the ferromagnetic Cr-GaNantiferromagnetic MnO interface.",
author = "Liu, {H. X.} and Wu, {Stephen Y.} and Rakesh Singh and Nathan Newman",
year = "2005",
month = "8",
day = "15",
doi = "10.1063/1.2014936",
language = "English (US)",
volume = "98",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "4",

}

TY - JOUR

T1 - Exchange biasing of ferromagnetic Cr-doped GaN using a MnO overlayer

AU - Liu, H. X.

AU - Wu, Stephen Y.

AU - Singh, Rakesh

AU - Newman, Nathan

PY - 2005/8/15

Y1 - 2005/8/15

N2 - We report the observation of an exchange biasing of ferromagnetic Cr-doped GaN films by an antiferromagnetic MnO overlayer. The center of the magnetic hysteresis loop shifts to a negative magnetic field by ∼70 Oe when measured after a positive field cooling. An enhancement of the coercive field of the Cr-doped GaN film is also found when the exchange-biasing MnO overlayer is present. The mechanism responsible for the exchange bias is attributed to the exchange coupling at the ferromagnetic Cr-GaNantiferromagnetic MnO interface.

AB - We report the observation of an exchange biasing of ferromagnetic Cr-doped GaN films by an antiferromagnetic MnO overlayer. The center of the magnetic hysteresis loop shifts to a negative magnetic field by ∼70 Oe when measured after a positive field cooling. An enhancement of the coercive field of the Cr-doped GaN film is also found when the exchange-biasing MnO overlayer is present. The mechanism responsible for the exchange bias is attributed to the exchange coupling at the ferromagnetic Cr-GaNantiferromagnetic MnO interface.

UR - http://www.scopus.com/inward/record.url?scp=25144452794&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=25144452794&partnerID=8YFLogxK

U2 - 10.1063/1.2014936

DO - 10.1063/1.2014936

M3 - Article

VL - 98

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 4

M1 - 046106

ER -