Examining performance enhancement of p-channel strained-SiGe MOSFET devices

Dragica Vasileska, S. Krishnan, M. Fischetti

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We examine performance enhancement of p-channel SiGe devices using our particle-based device simulator that takes into account self-consistently the bandstructure and the quantum mechanical space-quantization and mobility enhancement effects. We And surface roughness to be the dominant factor for the bad performance of p-channel SiGe devices when compared to conventional bulk p-MOSFETs at high bias conditions. At low and moderate bias conditions, when surface-roughness does not dominate the carrier transport, we observe performance enhancement in the operation of p-channel SiGe MOSFETs versus their conventional Si counterparts.

Original languageEnglish (US)
Title of host publicationNumerical Methods and Applications - 6th International Conference, NMA 2006, Revised Papers
PublisherSpringer Verlag
Pages189-196
Number of pages8
ISBN (Print)3540709401, 9783540709404
DOIs
StatePublished - Jan 1 2007
Event6th International Conference on Numerical Methods and Applications, NMA 2006 - Borovets, Bulgaria
Duration: Aug 20 2006Aug 24 2006

Publication series

NameLecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)
Volume4310 LNCS
ISSN (Print)0302-9743
ISSN (Electronic)1611-3349

Other

Other6th International Conference on Numerical Methods and Applications, NMA 2006
CountryBulgaria
CityBorovets
Period8/20/068/24/06

Keywords

  • Bandstructure effects
  • P-channel MOSFETs
  • Performance enhancement
  • Quantum confinement
  • Strain

ASJC Scopus subject areas

  • Theoretical Computer Science
  • Computer Science(all)

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