Examining performance enhancement of p-channel strained-SiGe MOSFET devices

Dragica Vasileska; S. Krishnan; M. Fischetti

doi:10.1007/978-3-540-70942-8_22

Examining performance enhancement of p-channel strained-SiGe MOSFET devices

Dragica Vasileska, S. Krishnan, M. Fischetti

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We examine performance enhancement of p-channel SiGe devices using our particle-based device simulator that takes into account self-consistently the bandstructure and the quantum mechanical space-quantization and mobility enhancement effects. We And surface roughness to be the dominant factor for the bad performance of p-channel SiGe devices when compared to conventional bulk p-MOSFETs at high bias conditions. At low and moderate bias conditions, when surface-roughness does not dominate the carrier transport, we observe performance enhancement in the operation of p-channel SiGe MOSFETs versus their conventional Si counterparts.

Original language	English (US)
Title of host publication	Numerical Methods and Applications - 6th International Conference, NMA 2006, Revised Papers
Publisher	Springer Verlag
Pages	189-196
Number of pages	8
ISBN (Print)	3540709401, 9783540709404
DOIs	https://doi.org/10.1007/978-3-540-70942-8_22
State	Published - Jan 1 2007
Event	6th International Conference on Numerical Methods and Applications, NMA 2006 - Borovets, Bulgaria Duration: Aug 20 2006 → Aug 24 2006

Publication series

Name	Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)
Volume	4310 LNCS
ISSN (Print)	0302-9743
ISSN (Electronic)	1611-3349

Other

Other	6th International Conference on Numerical Methods and Applications, NMA 2006
Country/Territory	Bulgaria
City	Borovets
Period	8/20/06 → 8/24/06

Keywords

Bandstructure effects
P-channel MOSFETs
Performance enhancement
Quantum confinement
Strain

ASJC Scopus subject areas

Theoretical Computer Science
General Computer Science

Access to Document

10.1007/978-3-540-70942-8_22

Cite this

Vasileska, D., Krishnan, S., & Fischetti, M. (2007). Examining performance enhancement of p-channel strained-SiGe MOSFET devices. In Numerical Methods and Applications - 6th International Conference, NMA 2006, Revised Papers (pp. 189-196). (Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics); Vol. 4310 LNCS). Springer Verlag. https://doi.org/10.1007/978-3-540-70942-8_22

Examining performance enhancement of p-channel strained-SiGe MOSFET devices. / Vasileska, Dragica; Krishnan, S.; Fischetti, M.
Numerical Methods and Applications - 6th International Conference, NMA 2006, Revised Papers. Springer Verlag, 2007. p. 189-196 (Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics); Vol. 4310 LNCS).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Vasileska, D, Krishnan, S & Fischetti, M 2007, Examining performance enhancement of p-channel strained-SiGe MOSFET devices. in Numerical Methods and Applications - 6th International Conference, NMA 2006, Revised Papers. Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics), vol. 4310 LNCS, Springer Verlag, pp. 189-196, 6th International Conference on Numerical Methods and Applications, NMA 2006, Borovets, Bulgaria, 8/20/06. https://doi.org/10.1007/978-3-540-70942-8_22

Vasileska D, Krishnan S, Fischetti M. Examining performance enhancement of p-channel strained-SiGe MOSFET devices. In Numerical Methods and Applications - 6th International Conference, NMA 2006, Revised Papers. Springer Verlag. 2007. p. 189-196. (Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)). doi: 10.1007/978-3-540-70942-8_22

Vasileska, Dragica ; Krishnan, S. ; Fischetti, M. / Examining performance enhancement of p-channel strained-SiGe MOSFET devices. Numerical Methods and Applications - 6th International Conference, NMA 2006, Revised Papers. Springer Verlag, 2007. pp. 189-196 (Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)).

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Examining performance enhancement of p-channel strained-SiGe MOSFET devices

Abstract

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Keywords

ASJC Scopus subject areas

Access to Document

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