EXAFS and XRD studies of phase formations of Co in reactions with SiGe alloys

Z. Wang, R. J. Nemanich, D. E. Sayers

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

Using EXAFS and XRD techniques, we have investigated the phase formation of Co/SiGe structures at several annealing temperatures. For the Co/Si0.80Ge0.20 samples annealed from 400°C to 600°C, Co(Si1-yGey) phases with y ∼ 0.10 were identified and the coordination number of Si around Co increases as the annealing temperature increases. For the sample annealed at 700°C, only the CoSi2 phase was formed. These results indicate a preferential CoSi reaction when annealing the Co/SiGe structure.

Original languageEnglish (US)
Pages (from-to)567-568
Number of pages2
JournalPhysica B: Physics of Condensed Matter
Volume208-209
Issue numberC
DOIs
StatePublished - Mar 1 1995
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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