EXAFS and XRD studies of phase formations of Co in reactions with SiGe alloys

Z. Wang, Robert Nemanich, D. E. Sayers

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Using EXAFS and XRD techniques, we have investigated the phase formation of Co/SiGe structures at several annealing temperatures. For the Co/Si0.80Ge0.20 samples annealed from 400°C to 600°C, Co(Si1-yGey) phases with y ∼ 0.10 were identified and the coordination number of Si around Co increases as the annealing temperature increases. For the sample annealed at 700°C, only the CoSi2 phase was formed. These results indicate a preferential CoSi reaction when annealing the Co/SiGe structure.

Original languageEnglish (US)
Pages (from-to)567-568
Number of pages2
JournalPhysica B: Physics of Condensed Matter
Volume208-209
Issue numberC
DOIs
StatePublished - Mar 1 1995
Externally publishedYes

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Annealing
annealing
coordination number
Temperature
temperature
Si-Ge alloys

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

EXAFS and XRD studies of phase formations of Co in reactions with SiGe alloys. / Wang, Z.; Nemanich, Robert; Sayers, D. E.

In: Physica B: Physics of Condensed Matter, Vol. 208-209, No. C, 01.03.1995, p. 567-568.

Research output: Contribution to journalArticle

@article{7533677d3cc646609dbd1a84f962f691,
title = "EXAFS and XRD studies of phase formations of Co in reactions with SiGe alloys",
abstract = "Using EXAFS and XRD techniques, we have investigated the phase formation of Co/SiGe structures at several annealing temperatures. For the Co/Si0.80Ge0.20 samples annealed from 400°C to 600°C, Co(Si1-yGey) phases with y ∼ 0.10 were identified and the coordination number of Si around Co increases as the annealing temperature increases. For the sample annealed at 700°C, only the CoSi2 phase was formed. These results indicate a preferential CoSi reaction when annealing the Co/SiGe structure.",
author = "Z. Wang and Robert Nemanich and Sayers, {D. E.}",
year = "1995",
month = "3",
day = "1",
doi = "10.1016/0921-4526(94)00753-I",
language = "English (US)",
volume = "208-209",
pages = "567--568",
journal = "Physica B: Condensed Matter",
issn = "0921-4526",
publisher = "Elsevier",
number = "C",

}

TY - JOUR

T1 - EXAFS and XRD studies of phase formations of Co in reactions with SiGe alloys

AU - Wang, Z.

AU - Nemanich, Robert

AU - Sayers, D. E.

PY - 1995/3/1

Y1 - 1995/3/1

N2 - Using EXAFS and XRD techniques, we have investigated the phase formation of Co/SiGe structures at several annealing temperatures. For the Co/Si0.80Ge0.20 samples annealed from 400°C to 600°C, Co(Si1-yGey) phases with y ∼ 0.10 were identified and the coordination number of Si around Co increases as the annealing temperature increases. For the sample annealed at 700°C, only the CoSi2 phase was formed. These results indicate a preferential CoSi reaction when annealing the Co/SiGe structure.

AB - Using EXAFS and XRD techniques, we have investigated the phase formation of Co/SiGe structures at several annealing temperatures. For the Co/Si0.80Ge0.20 samples annealed from 400°C to 600°C, Co(Si1-yGey) phases with y ∼ 0.10 were identified and the coordination number of Si around Co increases as the annealing temperature increases. For the sample annealed at 700°C, only the CoSi2 phase was formed. These results indicate a preferential CoSi reaction when annealing the Co/SiGe structure.

UR - http://www.scopus.com/inward/record.url?scp=0039583349&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0039583349&partnerID=8YFLogxK

U2 - 10.1016/0921-4526(94)00753-I

DO - 10.1016/0921-4526(94)00753-I

M3 - Article

AN - SCOPUS:0039583349

VL - 208-209

SP - 567

EP - 568

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

IS - C

ER -