Using EXAFS and XRD techniques, we have investigated the phase formation of Co/SiGe structures at several annealing temperatures. For the Co/Si0.80Ge0.20 samples annealed from 400°C to 600°C, Co(Si1-yGey) phases with y ∼ 0.10 were identified and the coordination number of Si around Co increases as the annealing temperature increases. For the sample annealed at 700°C, only the CoSi2 phase was formed. These results indicate a preferential CoSi reaction when annealing the Co/SiGe structure.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering