EXAFS and XRD studies of phase formations of Co in reactions with SiGe alloys

Z. Wang; R. J. Nemanich; D. E. Sayers

doi:10.1016/0921-4526(94)00753-I

EXAFS and XRD studies of phase formations of Co in reactions with SiGe alloys

Z. Wang, R. J. Nemanich, D. E. Sayers

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Using EXAFS and XRD techniques, we have investigated the phase formation of Co/SiGe structures at several annealing temperatures. For the Co/Si_0.80Ge_0.20 samples annealed from 400°C to 600°C, Co(Si_1-yGe_y) phases with y ∼ 0.10 were identified and the coordination number of Si around Co increases as the annealing temperature increases. For the sample annealed at 700°C, only the CoSi₂ phase was formed. These results indicate a preferential CoSi reaction when annealing the Co/SiGe structure.

Original language	English (US)
Pages (from-to)	567-568
Number of pages	2
Journal	Physica B: Physics of Condensed Matter
Volume	208-209
Issue number	C
DOIs	https://doi.org/10.1016/0921-4526(94)00753-I
State	Published - Mar 1 1995
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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title = "EXAFS and XRD studies of phase formations of Co in reactions with SiGe alloys",

abstract = "Using EXAFS and XRD techniques, we have investigated the phase formation of Co/SiGe structures at several annealing temperatures. For the Co/Si0.80Ge0.20 samples annealed from 400°C to 600°C, Co(Si1-yGey) phases with y ∼ 0.10 were identified and the coordination number of Si around Co increases as the annealing temperature increases. For the sample annealed at 700°C, only the CoSi2 phase was formed. These results indicate a preferential CoSi reaction when annealing the Co/SiGe structure.",

author = "Z. Wang and Nemanich, {R. J.} and Sayers, {D. E.}",

year = "1995",

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doi = "10.1016/0921-4526(94)00753-I",

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T1 - EXAFS and XRD studies of phase formations of Co in reactions with SiGe alloys

AU - Wang, Z.

AU - Nemanich, R. J.

AU - Sayers, D. E.

PY - 1995/3/1

Y1 - 1995/3/1

N2 - Using EXAFS and XRD techniques, we have investigated the phase formation of Co/SiGe structures at several annealing temperatures. For the Co/Si0.80Ge0.20 samples annealed from 400°C to 600°C, Co(Si1-yGey) phases with y ∼ 0.10 were identified and the coordination number of Si around Co increases as the annealing temperature increases. For the sample annealed at 700°C, only the CoSi2 phase was formed. These results indicate a preferential CoSi reaction when annealing the Co/SiGe structure.

AB - Using EXAFS and XRD techniques, we have investigated the phase formation of Co/SiGe structures at several annealing temperatures. For the Co/Si0.80Ge0.20 samples annealed from 400°C to 600°C, Co(Si1-yGey) phases with y ∼ 0.10 were identified and the coordination number of Si around Co increases as the annealing temperature increases. For the sample annealed at 700°C, only the CoSi2 phase was formed. These results indicate a preferential CoSi reaction when annealing the Co/SiGe structure.

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JO - Physica B: Physics of Condensed Matter

JF - Physica B: Physics of Condensed Matter

IS - C

ER -

EXAFS and XRD studies of phase formations of Co in reactions with SiGe alloys

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