Ex situ and in situ methods for complete oxygen and non-carbidic carbon removal from (0001)
            Si 6H-SiC surfaces

Sean W. King; Mark C. Benjamin; Richard S. Kern; Robert Nemanich; Robert F. Davis

Ex situ and in situ methods for complete oxygen and non-carbidic carbon removal from (0001) _Si 6H-SiC surfaces

Sean W. King, Mark C. Benjamin, Richard S. Kern, Robert Nemanich, Robert F. Davis

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Comparisons between the wetting characteristics of (0001) _Si 6H-SiC and (111) Si surfaces in various acids and bases were made. It was found that 10:1 HF dipped Si (111) surfaces were hydrophobic where as the (0001) _Si 6H-SiC surfaces were hydrophilic. (0001) _Si 6H-SiC surfaces capped with a 20 angstroms Si layer, however, were hydrophobic after HF dipping and exhibited outgassing levels on annealing which were several orders of magnitude lower than SiC wafers dipped in HF without the capping layer. Annealing the Si capped (0001) _Si 6H-SiC surfaces in UHV at 1100 °C for 5 min. was found to be sufficient to thermally desorb the Si capping layer and produce a (3×3) Si rich, oxygen free (0001) _Si 6H-SiC surface.

Original language	English (US)
Title of host publication	Materials Research Society Symposium - Proceedings
Publisher	Materials Research Society
Pages	563-568
Number of pages	6
Volume	423
State	Published - 1996
Externally published	Yes
Event	Proceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA Duration: Apr 8 1996 → Apr 12 1996

Other

Other	Proceedings of the 1996 MRS Spring Symposium
City	San Francisco, CA, USA
Period	4/8/96 → 4/12/96

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

Ex situ and in situ methods for complete oxygen and non-carbidic carbon removal from (0001) _Si 6H-SiC surfaces . / King, Sean W.; Benjamin, Mark C.; Kern, Richard S. et al.
Materials Research Society Symposium - Proceedings. Vol. 423 Materials Research Society, 1996. p. 563-568.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

King, SW, Benjamin, MC, Kern, RS, Nemanich, R & Davis, RF 1996, Ex situ and in situ methods for complete oxygen and non-carbidic carbon removal from (0001) _Si 6H-SiC surfaces in Materials Research Society Symposium - Proceedings. vol. 423, Materials Research Society, pp. 563-568, Proceedings of the 1996 MRS Spring Symposium, San Francisco, CA, USA, 4/8/96.

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title = "Ex situ and in situ methods for complete oxygen and non-carbidic carbon removal from (0001) Si 6H-SiC surfaces ",

abstract = "Comparisons between the wetting characteristics of (0001) Si 6H-SiC and (111) Si surfaces in various acids and bases were made. It was found that 10:1 HF dipped Si (111) surfaces were hydrophobic where as the (0001) Si 6H-SiC surfaces were hydrophilic. (0001) Si 6H-SiC surfaces capped with a 20 angstroms Si layer, however, were hydrophobic after HF dipping and exhibited outgassing levels on annealing which were several orders of magnitude lower than SiC wafers dipped in HF without the capping layer. Annealing the Si capped (0001) Si 6H-SiC surfaces in UHV at 1100 °C for 5 min. was found to be sufficient to thermally desorb the Si capping layer and produce a (3×3) Si rich, oxygen free (0001) Si 6H-SiC surface. ",

author = "King, {Sean W.} and Benjamin, {Mark C.} and Kern, {Richard S.} and Robert Nemanich and Davis, {Robert F.}",

year = "1996",

language = "English (US)",

volume = "423",

pages = "563--568",

booktitle = "Materials Research Society Symposium - Proceedings",

publisher = "Materials Research Society",

note = "Proceedings of the 1996 MRS Spring Symposium ; Conference date: 08-04-1996 Through 12-04-1996",

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T1 - Ex situ and in situ methods for complete oxygen and non-carbidic carbon removal from (0001) Si 6H-SiC surfaces

AU - King, Sean W.

AU - Benjamin, Mark C.

AU - Kern, Richard S.

AU - Nemanich, Robert

AU - Davis, Robert F.

PY - 1996

Y1 - 1996

N2 - Comparisons between the wetting characteristics of (0001) Si 6H-SiC and (111) Si surfaces in various acids and bases were made. It was found that 10:1 HF dipped Si (111) surfaces were hydrophobic where as the (0001) Si 6H-SiC surfaces were hydrophilic. (0001) Si 6H-SiC surfaces capped with a 20 angstroms Si layer, however, were hydrophobic after HF dipping and exhibited outgassing levels on annealing which were several orders of magnitude lower than SiC wafers dipped in HF without the capping layer. Annealing the Si capped (0001) Si 6H-SiC surfaces in UHV at 1100 °C for 5 min. was found to be sufficient to thermally desorb the Si capping layer and produce a (3×3) Si rich, oxygen free (0001) Si 6H-SiC surface.

AB - Comparisons between the wetting characteristics of (0001) Si 6H-SiC and (111) Si surfaces in various acids and bases were made. It was found that 10:1 HF dipped Si (111) surfaces were hydrophobic where as the (0001) Si 6H-SiC surfaces were hydrophilic. (0001) Si 6H-SiC surfaces capped with a 20 angstroms Si layer, however, were hydrophobic after HF dipping and exhibited outgassing levels on annealing which were several orders of magnitude lower than SiC wafers dipped in HF without the capping layer. Annealing the Si capped (0001) Si 6H-SiC surfaces in UHV at 1100 °C for 5 min. was found to be sufficient to thermally desorb the Si capping layer and produce a (3×3) Si rich, oxygen free (0001) Si 6H-SiC surface.

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M3 - Conference contribution

AN - SCOPUS:0030397184

VL - 423

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EP - 568

BT - Materials Research Society Symposium - Proceedings

PB - Materials Research Society

T2 - Proceedings of the 1996 MRS Spring Symposium

Y2 - 8 April 1996 through 12 April 1996

ER -

Ex situ and in situ methods for complete oxygen and non-carbidic carbon removal from (0001) _Si 6H-SiC surfaces

Abstract

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ASJC Scopus subject areas

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