Ex situ and in situ methods for complete oxygen and non-carbidic carbon removal from (0001) Si 6H-SiC surfaces

Sean W. King, Mark C. Benjamin, Richard S. Kern, Robert Nemanich, Robert F. Davis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Comparisons between the wetting characteristics of (0001) Si 6H-SiC and (111) Si surfaces in various acids and bases were made. It was found that 10:1 HF dipped Si (111) surfaces were hydrophobic where as the (0001) Si 6H-SiC surfaces were hydrophilic. (0001) Si 6H-SiC surfaces capped with a 20 angstroms Si layer, however, were hydrophobic after HF dipping and exhibited outgassing levels on annealing which were several orders of magnitude lower than SiC wafers dipped in HF without the capping layer. Annealing the Si capped (0001) Si 6H-SiC surfaces in UHV at 1100 °C for 5 min. was found to be sufficient to thermally desorb the Si capping layer and produce a (3×3) Si rich, oxygen free (0001) Si 6H-SiC surface.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages563-568
Number of pages6
Volume423
StatePublished - 1996
Externally publishedYes
EventProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
Duration: Apr 8 1996Apr 12 1996

Other

OtherProceedings of the 1996 MRS Spring Symposium
CitySan Francisco, CA, USA
Period4/8/964/12/96

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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