Evolution of self-assembled Ge/Si(211) islands

Margaret Floyd, Yangting Zhang, Jeffery Drucker, David Smith, S. Tari, S. Sivananthan

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Atomic force microscopy (AFM) and transmission electron microscopy have been used to investigate Ge islands, grown by molecular-beam epitaxy on Si(211) substrates with a nominal 15 Å Ge coverage at temperatures between 600 and 700 °C. The majority of islands grown at all three temperatures had irregular hexagonal footprints. Intermediate-sized islands grown at 650 and 700 °C became elongated laterally in the 〈111〉 direction parallel to the direction of substrate surface step edges. AFM cross-sectional analysis indicated that small coherent clusters were bound by 111 and 113 facets, whereas the largest dislocated clusters were primarily bound by 111 and 001 facets. The upper size bound for coherent clusters increased with increasing growth temperature.

Original languageEnglish (US)
Pages (from-to)4518-4520
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number27
DOIs
StatePublished - Dec 31 2001

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flat surfaces
atomic force microscopy
footprints
temperature
molecular beam epitaxy
transmission electron microscopy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Evolution of self-assembled Ge/Si(211) islands. / Floyd, Margaret; Zhang, Yangting; Drucker, Jeffery; Smith, David; Tari, S.; Sivananthan, S.

In: Applied Physics Letters, Vol. 79, No. 27, 31.12.2001, p. 4518-4520.

Research output: Contribution to journalArticle

Floyd, M, Zhang, Y, Drucker, J, Smith, D, Tari, S & Sivananthan, S 2001, 'Evolution of self-assembled Ge/Si(211) islands', Applied Physics Letters, vol. 79, no. 27, pp. 4518-4520. https://doi.org/10.1063/1.1428772
Floyd, Margaret ; Zhang, Yangting ; Drucker, Jeffery ; Smith, David ; Tari, S. ; Sivananthan, S. / Evolution of self-assembled Ge/Si(211) islands. In: Applied Physics Letters. 2001 ; Vol. 79, No. 27. pp. 4518-4520.
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