Abstract
Temperature-dependent photoluminescence in a Ga(AsBi) structure is modelled in an excitonic hopping model and compared to experiment. It is shown that theory and experiment cannot be brought into agreement when using a single energy scale. Thus, a second energy scale is introduced, resulting in a good agreement between theory and experiment. The two scales are identified with spatially large alloy disorder and additional cluster states subdividing this first scale.
Original language | English (US) |
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Pages (from-to) | 851-854 |
Number of pages | 4 |
Journal | Physica Status Solidi (B) Basic Research |
Volume | 248 |
Issue number | 4 |
DOIs | |
State | Published - Apr 2011 |
Keywords
- Disorder
- Ga(AsBi)
- Hopping
- Kinetic Monte-Carlo simulation
- Semiconductors
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics