@article{0ad4374c1a66471bbeb2856b7cb8e66a,
title = "Evidence of Interface Trap Build-Up in Irradiated 14-nm Bulk FinFET Technologies",
abstract = "Total ionizing dose response of 14-nm bulk-Si FinFETs has been studied with a specially designed test chip. The radiation testing shows evidence of interface trap build-up on 14-nm Bulk FinFET technologies. These defects created in the isolation layer give rise to a new radiation-induced leakage path which might lead to a reliability issue in CMOS technologies at or below the 14-nm node. TCAD simulations are performed and an analytical model for TID-induced leakage current is presented to support analysis of the identified TID mechanism. TCAD simulation and analytical model results are consistent with the experimental data.",
keywords = "14-nm bulk technology, FinFET, TCAD, device modeling, interface traps, leakage current, total ionizing dose",
author = "A. Privat and Barnaby, {H. J.} and M. Spear and M. Esposito and Manuel, {J. E.} and L. Clark and J. Brunhaver and A. Duvnjak and R. Jokai and Holbert, {K. E.} and McLain, {M. L.} and Marinella, {M. J.} and King, {M. P.}",
note = "Funding Information: ACKNOWLEDGMENT Sandia National Laboratories is a multimission laboratory managed and operated by National Technology and Engineering Solutions of Sandia, LLC, a wholly owned subsidiary of Honeywell International, Inc., for the U.S. Department of Energy{\textquoteright}s National Nuclear Security Administration under contract DE-NA-0003525. This article describes objective technical results and analysis. Any subjective views or opinions that might be expressed in the article do not necessarily represent the views of the U.S. Department of Energy or the United States Government. Funding Information: Manuscript received February 10, 2021; accepted March 7, 2021. Date of publication March 10, 2021; date of current version May 20, 2021. This work was supported in part by Sandia National Laboratories and in part by the SEEEC Grand Challenge Laboratory Directed Research and Development (LDRD) Project. Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",
year = "2021",
month = may,
doi = "10.1109/TNS.2021.3065267",
language = "English (US)",
volume = "68",
pages = "671--676",
journal = "IEEE Transactions on Nuclear Science",
issn = "0018-9499",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "5",
}