Evidence of carrier localization in photoluminescence spectroscopy studies of mid-wavelength infrared InAs/InAs1−xSbx type-II superlattices

E. H. Steenbergen, J. A. Massengale, G. Ariyawansa, Yong-Hang Zhang

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The temperature-dependent and excitation-dependent photoluminescence (PL) spectroscopy characterization of mid-wavelength infrared InAs/InAs1−xSbx type-II superlattices reveals evidence of carrier localization. Carrier localization is apparent in the 8 meV PL peak position blue shift from 4 K to 60 K while the peak full-width-at-half-maximum is non-monotonic, peaking at 25 K before increasing above 60 K. In addition, competition between two recombination processes is evident in the temperature-dependent behavior of the PL peak integrated intensity under low excitation conditions: the intensity decreases from 4 K to 80 K, increases from 80 K to 160 K, and decreases above 160 K. Excitation-dependent PL studies reveal the dominant recombination mechanism changes from free-to-bound or donor–acceptor-like recombination to excitonic or band-to-band recombination at ~60 K. These findings suggest that carrier localization is occurring below 60 K, and the confined carriers are holes as these are unintentionally doped n-type superlattices. The localization potentials are due to variations in the InAs1−xSbx composition, the interfaces, and the InAs and InAs1−xSbx layer widths. The width of a Gaussian distribution used to describe the density of states of the band tails due to carrier localization potentials ranges from 2 meV–4 meV. The larger energy corresponds to the smaller period superlattices, indicating the interface compositional variation is more prominent and creates larger localization potentials than in the longer period superlattices.

Original languageEnglish (US)
Pages (from-to)451-456
Number of pages6
JournalJournal of Luminescence
Volume178
DOIs
StatePublished - Oct 1 2016

Fingerprint

Photoluminescence spectroscopy
Superlattices
Genetic Recombination
superlattices
Spectrum Analysis
Infrared radiation
photoluminescence
Wavelength
Photoluminescence
wavelengths
spectroscopy
Temperature
Normal Distribution
Gaussian distribution
Full width at half maximum
excitation
indium arsenide
normal density functions
blue shift
Chemical analysis

Keywords

  • InAs/InAsSb
  • Infrared
  • Localization
  • Photoluminescence
  • Superlattice

ASJC Scopus subject areas

  • Biophysics
  • Chemistry(all)
  • Atomic and Molecular Physics, and Optics
  • Biochemistry
  • Condensed Matter Physics

Cite this

Evidence of carrier localization in photoluminescence spectroscopy studies of mid-wavelength infrared InAs/InAs1−xSbx type-II superlattices. / Steenbergen, E. H.; Massengale, J. A.; Ariyawansa, G.; Zhang, Yong-Hang.

In: Journal of Luminescence, Vol. 178, 01.10.2016, p. 451-456.

Research output: Contribution to journalArticle

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AB - The temperature-dependent and excitation-dependent photoluminescence (PL) spectroscopy characterization of mid-wavelength infrared InAs/InAs1−xSbx type-II superlattices reveals evidence of carrier localization. Carrier localization is apparent in the 8 meV PL peak position blue shift from 4 K to 60 K while the peak full-width-at-half-maximum is non-monotonic, peaking at 25 K before increasing above 60 K. In addition, competition between two recombination processes is evident in the temperature-dependent behavior of the PL peak integrated intensity under low excitation conditions: the intensity decreases from 4 K to 80 K, increases from 80 K to 160 K, and decreases above 160 K. Excitation-dependent PL studies reveal the dominant recombination mechanism changes from free-to-bound or donor–acceptor-like recombination to excitonic or band-to-band recombination at ~60 K. These findings suggest that carrier localization is occurring below 60 K, and the confined carriers are holes as these are unintentionally doped n-type superlattices. The localization potentials are due to variations in the InAs1−xSbx composition, the interfaces, and the InAs and InAs1−xSbx layer widths. The width of a Gaussian distribution used to describe the density of states of the band tails due to carrier localization potentials ranges from 2 meV–4 meV. The larger energy corresponds to the smaller period superlattices, indicating the interface compositional variation is more prominent and creates larger localization potentials than in the longer period superlattices.

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