Evidence for solid-state effects in the electronic structure of C60 films: a resonance-Raman study

K. Sinha; Jose Menendez; R. C. Hanson; G. B. Adams; J. B. Page; O. F. Sankey; L. D. Lamb; D. R. Huffman

doi:10.1016/S0009-2614(91)85143-K

Evidence for solid-state effects in the electronic structure of C₆₀ films: a resonance-Raman study

K. Sinha, Jose Menendez, R. C. Hanson, G. B. Adams, J. B. Page, O. F. Sankey, L. D. Lamb, D. R. Huffman

Physics

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36 Scopus citations

Abstract

The Raman excitation profiles for C₆₀ films grown on silicon reveal the existence of optical transitions near 2.4 eV, well below the lowest dipole-allowed absorption line predicted for isolated icosahedral molecules. These transitions are not observed in C₆₀ dissolved in CS₂. We propose an explanation in terms of a breakdown of the icosahedral inversion symmetry in C₆₀ crystals.

Original language	English (US)
Pages (from-to)	287-290
Number of pages	4
Journal	Chemical Physics Letters
Volume	186
Issue number	2-3
DOIs	https://doi.org/10.1016/S0009-2614(91)85143-K
State	Published - Nov 8 1991

ASJC Scopus subject areas

Physics and Astronomy(all)
Physical and Theoretical Chemistry

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title = "Evidence for solid-state effects in the electronic structure of C60 films: a resonance-Raman study",

abstract = "The Raman excitation profiles for C60 films grown on silicon reveal the existence of optical transitions near 2.4 eV, well below the lowest dipole-allowed absorption line predicted for isolated icosahedral molecules. These transitions are not observed in C60 dissolved in CS2. We propose an explanation in terms of a breakdown of the icosahedral inversion symmetry in C60 crystals.",

author = "K. Sinha and Jose Menendez and Hanson, {R. C.} and Adams, {G. B.} and Page, {J. B.} and Sankey, {O. F.} and Lamb, {L. D.} and Huffman, {D. R.}",

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T1 - Evidence for solid-state effects in the electronic structure of C60 films

T2 - a resonance-Raman study

AU - Sinha, K.

AU - Menendez, Jose

AU - Hanson, R. C.

AU - Adams, G. B.

AU - Page, J. B.

AU - Sankey, O. F.

AU - Lamb, L. D.

AU - Huffman, D. R.

PY - 1991/11/8

Y1 - 1991/11/8

N2 - The Raman excitation profiles for C60 films grown on silicon reveal the existence of optical transitions near 2.4 eV, well below the lowest dipole-allowed absorption line predicted for isolated icosahedral molecules. These transitions are not observed in C60 dissolved in CS2. We propose an explanation in terms of a breakdown of the icosahedral inversion symmetry in C60 crystals.

AB - The Raman excitation profiles for C60 films grown on silicon reveal the existence of optical transitions near 2.4 eV, well below the lowest dipole-allowed absorption line predicted for isolated icosahedral molecules. These transitions are not observed in C60 dissolved in CS2. We propose an explanation in terms of a breakdown of the icosahedral inversion symmetry in C60 crystals.

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JO - Chemical Physics Letters

JF - Chemical Physics Letters

IS - 2-3

ER -

Evidence for solid-state effects in the electronic structure of C₆₀ films: a resonance-Raman study

Abstract

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