Evidence for inter-miniband scattering due to electron heating in Si: SiGe quantum wells grown on tilted substrates

S. Kaya, T. J. Thornton, P. W. Green, K. Fobelets, J. M. Fernández

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

We have measured the magneto-transport properties of Si: SiGe quantum wells grown on (001) and (118) substrates as a function of applied bias. While the on-axis samples show conventional effects due to electron heating, the tilted substrates display a markedly different behaviour. A Fourier transform analysis of the Shubnikov-de Haas oscillations is presented. The FFT power spectrum from (118) quantum well wires aligned along the tilt direction shows evidence that the miniband, which is known to exist in these tilted samples, is being occupied with electrons excited by the electric field.

Original languageEnglish (US)
Pages (from-to)227-229
Number of pages3
JournalPhysica Status Solidi (B) Basic Research
Volume204
Issue number1
DOIs
StatePublished - Nov 1997
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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