@inproceedings{4e235eb914af4622aa6b6c166f82b350,
title = "Evaluation of Secco etch technique for determination of dislocation densities in SIMOX wafers",
abstract = "The authors report on an extensive study of a Secco etch process for determining dislocation densities that was performed by three different groups using nine SIMOX (separation by implanted oxygen) wafers from the same lot. The average dislocation density across the entire current data set (except transmission electron microscopy, TEM) is 2.2 × 106/cm2 with a standard deviation of 1.0 × 106/cm2. Most of the data points are in the low 106 dislocations/cm2 range, in agreement with the TEM results, and indicate good consistency of results from facility to facility.",
author = "E. Cortesi and El-Ghor, {M. K.} and Hosack, {H. H.} and Allen, {L. P.} and P. Roitman and Krause, {S. J.}",
year = "1992",
month = jan,
day = "1",
language = "English (US)",
isbn = "0780301846",
series = "1991 IEEE International SOI Conference Proceedings",
publisher = "Publ by IEEE",
pages = "118--119",
booktitle = "1991 IEEE International SOI Conference Proceedings",
note = "1991 IEEE International SOI Conference ; Conference date: 01-10-1991 Through 03-10-1991",
}