Evaluation of Secco etch technique for determination of dislocation densities in SIMOX wafers

E. Cortesi, M. K. El-Ghor, H. H. Hosack, L. P. Allen, P. Roitman, S. J. Krause

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

The authors report on an extensive study of a Secco etch process for determining dislocation densities that was performed by three different groups using nine SIMOX (separation by implanted oxygen) wafers from the same lot. The average dislocation density across the entire current data set (except transmission electron microscopy, TEM) is 2.2 × 106/cm2 with a standard deviation of 1.0 × 106/cm2. Most of the data points are in the low 106 dislocations/cm2 range, in agreement with the TEM results, and indicate good consistency of results from facility to facility.

Original languageEnglish (US)
Title of host publication1991 IEEE International SOI Conference Proceedings
PublisherPubl by IEEE
Pages118-119
Number of pages2
ISBN (Print)0780301846
StatePublished - Jan 1 1992
Externally publishedYes
Event1991 IEEE International SOI Conference - Vail Valley, CO, USA
Duration: Oct 1 1991Oct 3 1991

Publication series

Name1991 IEEE International SOI Conference Proceedings

Other

Other1991 IEEE International SOI Conference
CityVail Valley, CO, USA
Period10/1/9110/3/91

ASJC Scopus subject areas

  • Engineering(all)

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