@inproceedings{210f7791d4854fd7801acdad721d9444,
title = "Evaluation of passivation layers via temperature-dependent lifetime measurements",
abstract = "The effect of temperature on the surface passivation of p-type and n-type monocrystalline silicon is evaluated by temperature dependent photoconductance decay (PCD). Wafers with different passivation layers, i.e. a-Si and SiNx are the subject of these studies. A characteristic lifetime increment is observed for p-type samples coated with a-Si(i) when compared to substrates passivated with SiNx, in agreement with previous literature reports. A different behavior is measured for the case of n-type samples, which show comparable lifetimes among samples with different passivation layers. An interesting lifetime increment is also found at high injection levels for n-type substrates coated with a-Si(i).",
keywords = "TIDLS, amorphous silicon, passivation, photoconductance, silicon, silicon-nitride",
author = "Simone Bernardini and Blum, {Adrienne L.} and Mariana Bertoni",
note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 40th IEEE Photovoltaic Specialist Conference, PVSC 2014 ; Conference date: 08-06-2014 Through 13-06-2014",
year = "2014",
month = oct,
day = "15",
doi = "10.1109/PVSC.2014.6925131",
language = "English (US)",
series = "2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1206--1210",
booktitle = "2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014",
}