Evaluation of passivation layers via temperature-dependent lifetime measurements

Simone Bernardini, Adrienne L. Blum, Mariana Bertoni

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The effect of temperature on the surface passivation of p-type and n-type monocrystalline silicon is evaluated by temperature dependent photoconductance decay (PCD). Wafers with different passivation layers, i.e. a-Si and SiNx are the subject of these studies. A characteristic lifetime increment is observed for p-type samples coated with a-Si(i) when compared to substrates passivated with SiNx, in agreement with previous literature reports. A different behavior is measured for the case of n-type samples, which show comparable lifetimes among samples with different passivation layers. An interesting lifetime increment is also found at high injection levels for n-type substrates coated with a-Si(i).

Original languageEnglish (US)
Title of host publication2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1206-1210
Number of pages5
ISBN (Print)9781479943982
DOIs
StatePublished - Oct 15 2014
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: Jun 8 2014Jun 13 2014

Other

Other40th IEEE Photovoltaic Specialist Conference, PVSC 2014
CountryUnited States
CityDenver
Period6/8/146/13/14

Fingerprint

Passivation
Monocrystalline silicon
Substrates
Temperature

Keywords

  • amorphous silicon
  • passivation
  • photoconductance
  • silicon
  • silicon-nitride
  • TIDLS

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Bernardini, S., Blum, A. L., & Bertoni, M. (2014). Evaluation of passivation layers via temperature-dependent lifetime measurements. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 (pp. 1206-1210). [6925131] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2014.6925131

Evaluation of passivation layers via temperature-dependent lifetime measurements. / Bernardini, Simone; Blum, Adrienne L.; Bertoni, Mariana.

2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 1206-1210 6925131.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Bernardini, S, Blum, AL & Bertoni, M 2014, Evaluation of passivation layers via temperature-dependent lifetime measurements. in 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014., 6925131, Institute of Electrical and Electronics Engineers Inc., pp. 1206-1210, 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States, 6/8/14. https://doi.org/10.1109/PVSC.2014.6925131
Bernardini S, Blum AL, Bertoni M. Evaluation of passivation layers via temperature-dependent lifetime measurements. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 1206-1210. 6925131 https://doi.org/10.1109/PVSC.2014.6925131
Bernardini, Simone ; Blum, Adrienne L. ; Bertoni, Mariana. / Evaluation of passivation layers via temperature-dependent lifetime measurements. 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 1206-1210
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