Evaluation of ELDRS mechanisms using dose rate switching experiments on gated lateral PNP transistors

Yago Gonzalez-Velo, Jérme Boch, Frédéric Saigne, Nicolas J.H. Roche, Stephanie Perez, Jean Roch Vaille, Christelle Deneau, Laurent Dusseau, Eric Lorfevre, Ronald D. Schrimpf, Christian Chatry, Enoal Legoulven, Dale G. Platteter

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

The switched dose rate technique has been proposed as an accelerated test technique for enhanced low-dose-rate sensitivity. The physical mechanisms at play when this technique is applied are investigated in this paper. The variation of N ot and N it is characterized using gated lateral pnp transistors to understand the kinetics of device degradation related to differences in mechanisms between high dose rate and low dose rate irradiations.

Original languageEnglish (US)
Article number6074973
Pages (from-to)2953-2960
Number of pages8
JournalIEEE Transactions on Nuclear Science
Volume58
Issue number6 PART 1
DOIs
StatePublished - Dec 2011

Keywords

  • Bipolar devices
  • ELDRS
  • interface trapped charge
  • oxide trapped charge
  • total dose

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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