Evaluation of ELDRS mechanisms using dose rate switching experiments on gated lateral PNP transistors

Yago Gonzalez Velo, Jérme Boch, Frédéric Saigne, Nicolas J.H. Roche, Stephanie Perez, Jean Roch Vaille, Christelle Deneau, Laurent Dusseau, Eric Lorfevre, Ronald D. Schrimpf, Christian Chatry, Enoal Legoulven, Dale G. Platteter

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The switched dose rate technique has been proposed as an accelerated test technique for enhanced low-dose-rate sensitivity. The physical mechanisms at play when this technique is applied are investigated in this paper. The variation of N ot and N it is characterized using gated lateral pnp transistors to understand the kinetics of device degradation related to differences in mechanisms between high dose rate and low dose rate irradiations.

Original languageEnglish (US)
Article number6074973
Pages (from-to)2953-2960
Number of pages8
JournalIEEE Transactions on Nuclear Science
Volume58
Issue number6 PART 1
DOIs
StatePublished - Dec 1 2011
Externally publishedYes

Fingerprint

Dosimetry
Transistors
transistors
dosage
evaluation
Experiments
Irradiation
Degradation
Kinetics
degradation
irradiation
kinetics

Keywords

  • Bipolar devices
  • ELDRS
  • interface trapped charge
  • oxide trapped charge
  • total dose

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this

Gonzalez Velo, Y., Boch, J., Saigne, F., Roche, N. J. H., Perez, S., Vaille, J. R., ... Platteter, D. G. (2011). Evaluation of ELDRS mechanisms using dose rate switching experiments on gated lateral PNP transistors. IEEE Transactions on Nuclear Science, 58(6 PART 1), 2953-2960. [6074973]. https://doi.org/10.1109/TNS.2011.2170707

Evaluation of ELDRS mechanisms using dose rate switching experiments on gated lateral PNP transistors. / Gonzalez Velo, Yago; Boch, Jérme; Saigne, Frédéric; Roche, Nicolas J.H.; Perez, Stephanie; Vaille, Jean Roch; Deneau, Christelle; Dusseau, Laurent; Lorfevre, Eric; Schrimpf, Ronald D.; Chatry, Christian; Legoulven, Enoal; Platteter, Dale G.

In: IEEE Transactions on Nuclear Science, Vol. 58, No. 6 PART 1, 6074973, 01.12.2011, p. 2953-2960.

Research output: Contribution to journalArticle

Gonzalez Velo, Y, Boch, J, Saigne, F, Roche, NJH, Perez, S, Vaille, JR, Deneau, C, Dusseau, L, Lorfevre, E, Schrimpf, RD, Chatry, C, Legoulven, E & Platteter, DG 2011, 'Evaluation of ELDRS mechanisms using dose rate switching experiments on gated lateral PNP transistors', IEEE Transactions on Nuclear Science, vol. 58, no. 6 PART 1, 6074973, pp. 2953-2960. https://doi.org/10.1109/TNS.2011.2170707
Gonzalez Velo Y, Boch J, Saigne F, Roche NJH, Perez S, Vaille JR et al. Evaluation of ELDRS mechanisms using dose rate switching experiments on gated lateral PNP transistors. IEEE Transactions on Nuclear Science. 2011 Dec 1;58(6 PART 1):2953-2960. 6074973. https://doi.org/10.1109/TNS.2011.2170707
Gonzalez Velo, Yago ; Boch, Jérme ; Saigne, Frédéric ; Roche, Nicolas J.H. ; Perez, Stephanie ; Vaille, Jean Roch ; Deneau, Christelle ; Dusseau, Laurent ; Lorfevre, Eric ; Schrimpf, Ronald D. ; Chatry, Christian ; Legoulven, Enoal ; Platteter, Dale G. / Evaluation of ELDRS mechanisms using dose rate switching experiments on gated lateral PNP transistors. In: IEEE Transactions on Nuclear Science. 2011 ; Vol. 58, No. 6 PART 1. pp. 2953-2960.
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