Evaluation of ELDRS mechanisms using dose rate switching experiments on gated lateral PNP transistors

Yago Gonzalez-Velo; Jérme Boch; Frédéric Saigne; Nicolas J.H. Roche; Stephanie Perez; Jean Roch Vaille; Christelle Deneau; Laurent Dusseau; Eric Lorfevre; Ronald D. Schrimpf; Christian Chatry; Enoal Legoulven; Dale G. Platteter

doi:10.1109/TNS.2011.2170707

Evaluation of ELDRS mechanisms using dose rate switching experiments on gated lateral PNP transistors

Yago Gonzalez-Velo, Jérme Boch, Frédéric Saigne, Nicolas J.H. Roche, Stephanie Perez, Jean Roch Vaille, Christelle Deneau, Laurent Dusseau, Eric Lorfevre, Ronald D. Schrimpf, Christian Chatry, Enoal Legoulven, Dale G. Platteter

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

The switched dose rate technique has been proposed as an accelerated test technique for enhanced low-dose-rate sensitivity. The physical mechanisms at play when this technique is applied are investigated in this paper. The variation of N _ot and N _it is characterized using gated lateral pnp transistors to understand the kinetics of device degradation related to differences in mechanisms between high dose rate and low dose rate irradiations.

Original language	English (US)
Article number	6074973
Pages (from-to)	2953-2960
Number of pages	8
Journal	IEEE Transactions on Nuclear Science
Volume	58
Issue number	6 PART 1
DOIs	https://doi.org/10.1109/TNS.2011.2170707
State	Published - Dec 2011
Externally published	Yes

Keywords

Bipolar devices
ELDRS
interface trapped charge
oxide trapped charge
total dose

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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10.1109/TNS.2011.2170707

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Gonzalez-Velo, Y., Boch, J., Saigne, F., Roche, N. J. H., Perez, S., Vaille, J. R., Deneau, C., Dusseau, L., Lorfevre, E., Schrimpf, R. D., Chatry, C., Legoulven, E., & Platteter, D. G. (2011). Evaluation of ELDRS mechanisms using dose rate switching experiments on gated lateral PNP transistors. IEEE Transactions on Nuclear Science, 58(6 PART 1), 2953-2960. Article 6074973. https://doi.org/10.1109/TNS.2011.2170707

Gonzalez-Velo, Y, Boch, J, Saigne, F, Roche, NJH, Perez, S, Vaille, JR, Deneau, C, Dusseau, L, Lorfevre, E, Schrimpf, RD, Chatry, C, Legoulven, E & Platteter, DG 2011, 'Evaluation of ELDRS mechanisms using dose rate switching experiments on gated lateral PNP transistors', IEEE Transactions on Nuclear Science, vol. 58, no. 6 PART 1, 6074973, pp. 2953-2960. https://doi.org/10.1109/TNS.2011.2170707

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title = "Evaluation of ELDRS mechanisms using dose rate switching experiments on gated lateral PNP transistors",

abstract = "The switched dose rate technique has been proposed as an accelerated test technique for enhanced low-dose-rate sensitivity. The physical mechanisms at play when this technique is applied are investigated in this paper. The variation of N ot and N it is characterized using gated lateral pnp transistors to understand the kinetics of device degradation related to differences in mechanisms between high dose rate and low dose rate irradiations.",

keywords = "Bipolar devices, ELDRS, interface trapped charge, oxide trapped charge, total dose",

author = "Yago Gonzalez-Velo and J{\'e}rme Boch and Fr{\'e}d{\'e}ric Saigne and Roche, {Nicolas J.H.} and Stephanie Perez and Vaille, {Jean Roch} and Christelle Deneau and Laurent Dusseau and Eric Lorfevre and Schrimpf, {Ronald D.} and Christian Chatry and Enoal Legoulven and Platteter, {Dale G.}",

note = "Funding Information: Manuscript received July 21, 2011; revised September 08, 2011; accepted September 08, 2011. Date of publication November 09, 2011; date of current version December 14, 2011. This work was supported in part by the Agence Nationale de la Recherche (ANR-07-JCJC-0152) and in part by the Centre National d{\textquoteright}Etudes Spatiales, CNES.",

year = "2011",

month = dec,

doi = "10.1109/TNS.2011.2170707",

language = "English (US)",

volume = "58",

pages = "2953--2960",

journal = "IEEE Transactions on Nuclear Science",

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AU - Boch, Jérme

AU - Saigne, Frédéric

AU - Roche, Nicolas J.H.

AU - Perez, Stephanie

AU - Vaille, Jean Roch

AU - Deneau, Christelle

AU - Dusseau, Laurent

AU - Lorfevre, Eric

AU - Schrimpf, Ronald D.

AU - Chatry, Christian

AU - Legoulven, Enoal

AU - Platteter, Dale G.

N1 - Funding Information: Manuscript received July 21, 2011; revised September 08, 2011; accepted September 08, 2011. Date of publication November 09, 2011; date of current version December 14, 2011. This work was supported in part by the Agence Nationale de la Recherche (ANR-07-JCJC-0152) and in part by the Centre National d’Etudes Spatiales, CNES.

PY - 2011/12

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KW - Bipolar devices

KW - ELDRS

KW - interface trapped charge

KW - oxide trapped charge

KW - total dose

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Evaluation of ELDRS mechanisms using dose rate switching experiments on gated lateral PNP transistors

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