Evaluation of Dilute Bismide Materials for Mid-IR Applications

J. Hader, S. C. Badescu, L. C. Bannow, J. V. Moloney, Shane Johnson, S. W. Koch

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The introduction of Bismide in InAs leads to a strong bandgap reduction on the order of 40-50meV per percent Bi-admixture. This allows InAsBi to be able to reach mid-IR wavelengths in the 3-5 μm range with less than about three percent Bi. Typically, materials for this wavelength range suffer from very strong Auger losses. These have so far limited room-temperature CW operation in devices based on type-I quantum wells to wavelength shorter than about 3.5 μm.

Original languageEnglish (US)
Title of host publication26th International Semiconductor Laser Conference, ISLC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages183-184
Number of pages2
ISBN (Electronic)9781538664865
DOIs
StatePublished - Oct 30 2018
Event26th International Semiconductor Laser Conference, ISLC 2018 - Santa Fe, United States
Duration: Sep 16 2018Sep 19 2018

Publication series

NameConference Digest - IEEE International Semiconductor Laser Conference
Volume2018-September
ISSN (Print)0899-9406

Other

Other26th International Semiconductor Laser Conference, ISLC 2018
CountryUnited States
CitySanta Fe
Period9/16/189/19/18

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Evaluation of Dilute Bismide Materials for Mid-IR Applications'. Together they form a unique fingerprint.

Cite this