@inproceedings{b610829a5ece4513a20587f38c448666,
title = "Evaluation of Dilute Bismide Materials for Mid-IR Applications",
abstract = "The introduction of Bismide in InAs leads to a strong bandgap reduction on the order of 40-50meV per percent Bi-admixture. This allows InAsBi to be able to reach mid-IR wavelengths in the 3-5 μm range with less than about three percent Bi. Typically, materials for this wavelength range suffer from very strong Auger losses. These have so far limited room-temperature CW operation in devices based on type-I quantum wells to wavelength shorter than about 3.5 μm.",
author = "J. Hader and Badescu, {S. C.} and Bannow, {L. C.} and Moloney, {J. V.} and Shane Johnson and Koch, {S. W.}",
note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 26th International Semiconductor Laser Conference, ISLC 2018 ; Conference date: 16-09-2018 Through 19-09-2018",
year = "2018",
month = oct,
day = "30",
doi = "10.1109/ISLC.2018.8516227",
language = "English (US)",
series = "Conference Digest - IEEE International Semiconductor Laser Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "183--184",
booktitle = "26th International Semiconductor Laser Conference, ISLC 2018",
}