@inproceedings{4e7f4b7e242f446b92d7afe9bc5429b9,
title = "Evaluation of Carrier Trapping in SiNx Towards Ion Migration Measurements",
abstract = "Sodium ion migration has been implicated in potential induced degradation of the shunting type. The kinetics of sodium migration in silicon nitride can be investigated using a simple capacitance-voltage characterization technique. However, we show that the charge trapping strongly affects the measurement and must be taken into consideration in the experimental approach. We perform a systematic analysis of charge carrier trapping in silicon nitride, allowing us to correct trapping effects that otherwise prevent sodium signal detection. We extract trapping and detrapping time constants both on the order of several hours. This shows that trapping cannot be ignored as it occurs relatively quickly and is constantly evolving in time. Accurate determination of sodium behavior in dielectric layers will facilitate robust co-optimization of these layers for optical, passivation, and barrier properties.",
keywords = "PID, Silicon, capacitance-voltage, sodium, trapping",
author = "Gastrow, {Guillaume Von} and Jonathan Scharf and Jacob Clenney and Loran, {Erick Martinez} and Rico Meier and Bertoni, {Mariana I.} and Fenning, {David P.}",
note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 46th IEEE Photovoltaic Specialists Conference, PVSC 2019 ; Conference date: 16-06-2019 Through 21-06-2019",
year = "2019",
month = jun,
doi = "10.1109/PVSC40753.2019.8980850",
language = "English (US)",
series = "Conference Record of the IEEE Photovoltaic Specialists Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "2017--2020",
booktitle = "2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019",
}