Abstract
InAs/InAs1-xSbx type II superlattices designed for mid-wavelength infrared photo-detection have been studied using several electron microscopy methods, with specific attention directed towards interface chemical diffusion caused by Sb segregation. Reciprocal-space image analysis using the geometric phase method showed asymmetric interfacial strain profiles at the InAs-on-InAsSb interface. Measurement of local Sb compositional profiles across the superlattices using electron energy-loss spectroscopy and 002 dark-field imaging confirmed asymmetric Sb distribution, with the InAs-on-InAsSb interface being chemically graded. In contrast, the InAsSb-on-InAs interface showed a small intrinsic interface width. Careful evaluation of the experimental Sb composition profiles using a combined segregation and sigmoidal model reached quantitative agreement. Segregation dominated over the sigmoidal growth at the InAs-on-InAsSb interface, and the segregation probability of 0.81 ± 0.01 obtained from the two microscopy techniques agreed well within experimental error. Thus, 81% of Sb atoms from the topmost layers segregated into the next layer during growth causing the interfaces to be broadened over a length of ∼3 nm. This strong Sb segregation occurred throughout the whole superlattice stack, and would likely induce undesirable effects on band-gap engineering, such as blue-shift or broadening of the optical response, as well as weakened absorption.
| Original language | English (US) |
|---|---|
| Article number | 095702 |
| Journal | Journal of Applied Physics |
| Volume | 119 |
| Issue number | 9 |
| DOIs | |
| State | Published - Mar 7 2016 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Evaluation of antimony segregation in InAs/InAs1-xSbx type-II superlattices grown by molecular beam epitaxy. / Lu, Jing; Luna, Esperanza; Aoki, Toshihiro; Steenbergen, Elizabeth H.; Zhang, Yong-Hang; Smith, David.
In: Journal of Applied Physics, Vol. 119, No. 9, 095702, 07.03.2016.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Evaluation of antimony segregation in InAs/InAs1-xSbx type-II superlattices grown by molecular beam epitaxy
AU - Lu, Jing
AU - Luna, Esperanza
AU - Aoki, Toshihiro
AU - Steenbergen, Elizabeth H.
AU - Zhang, Yong-Hang
AU - Smith, David
PY - 2016/3/7
Y1 - 2016/3/7
N2 - InAs/InAs1-xSbx type II superlattices designed for mid-wavelength infrared photo-detection have been studied using several electron microscopy methods, with specific attention directed towards interface chemical diffusion caused by Sb segregation. Reciprocal-space image analysis using the geometric phase method showed asymmetric interfacial strain profiles at the InAs-on-InAsSb interface. Measurement of local Sb compositional profiles across the superlattices using electron energy-loss spectroscopy and 002 dark-field imaging confirmed asymmetric Sb distribution, with the InAs-on-InAsSb interface being chemically graded. In contrast, the InAsSb-on-InAs interface showed a small intrinsic interface width. Careful evaluation of the experimental Sb composition profiles using a combined segregation and sigmoidal model reached quantitative agreement. Segregation dominated over the sigmoidal growth at the InAs-on-InAsSb interface, and the segregation probability of 0.81 ± 0.01 obtained from the two microscopy techniques agreed well within experimental error. Thus, 81% of Sb atoms from the topmost layers segregated into the next layer during growth causing the interfaces to be broadened over a length of ∼3 nm. This strong Sb segregation occurred throughout the whole superlattice stack, and would likely induce undesirable effects on band-gap engineering, such as blue-shift or broadening of the optical response, as well as weakened absorption.
AB - InAs/InAs1-xSbx type II superlattices designed for mid-wavelength infrared photo-detection have been studied using several electron microscopy methods, with specific attention directed towards interface chemical diffusion caused by Sb segregation. Reciprocal-space image analysis using the geometric phase method showed asymmetric interfacial strain profiles at the InAs-on-InAsSb interface. Measurement of local Sb compositional profiles across the superlattices using electron energy-loss spectroscopy and 002 dark-field imaging confirmed asymmetric Sb distribution, with the InAs-on-InAsSb interface being chemically graded. In contrast, the InAsSb-on-InAs interface showed a small intrinsic interface width. Careful evaluation of the experimental Sb composition profiles using a combined segregation and sigmoidal model reached quantitative agreement. Segregation dominated over the sigmoidal growth at the InAs-on-InAsSb interface, and the segregation probability of 0.81 ± 0.01 obtained from the two microscopy techniques agreed well within experimental error. Thus, 81% of Sb atoms from the topmost layers segregated into the next layer during growth causing the interfaces to be broadened over a length of ∼3 nm. This strong Sb segregation occurred throughout the whole superlattice stack, and would likely induce undesirable effects on band-gap engineering, such as blue-shift or broadening of the optical response, as well as weakened absorption.
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U2 - 10.1063/1.4942844
DO - 10.1063/1.4942844
M3 - Article
VL - 119
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 9
M1 - 095702
ER -