Evaluation of a design methodology dedicated to dose-rate-hardened linear integrated circuits

Y. Deval, H. Lapuyade, P. Fouillat, H. Barnaby, F. Darracq, R. Briand, D. Lewis, R. D. Schrimpf

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

A design methodology to harden linear integrated circuits with respect to high dose-rate effects is presented. It takes into account the photocurrents induced within the substrate which are responsible for the major degradation of the electrical response of the circuits. This noninvasive approach can be applied to any electronic function. Laser irradiation is used to validate the technique, so that very high levels of dose rates can be experimentally simulated.

Original languageEnglish (US)
Pages (from-to)1468-1473
Number of pages6
JournalIEEE Transactions on Nuclear Science
Volume49 III
Issue number3
DOIs
StatePublished - Jun 1 2002
Externally publishedYes

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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    Deval, Y., Lapuyade, H., Fouillat, P., Barnaby, H., Darracq, F., Briand, R., Lewis, D., & Schrimpf, R. D. (2002). Evaluation of a design methodology dedicated to dose-rate-hardened linear integrated circuits. IEEE Transactions on Nuclear Science, 49 III(3), 1468-1473. https://doi.org/10.1109/TNS.2002.1039685