Evaluation of a design methodology dedicated to dose-rate-hardened linear integrated circuits

Y. Deval; H. Lapuyade; P. Fouillat; H. Barnaby; F. Darracq; R. Briand; D. Lewis; R. D. Schrimpf

doi:10.1109/TNS.2002.1039685

Evaluation of a design methodology dedicated to dose-rate-hardened linear integrated circuits

Y. Deval, H. Lapuyade, P. Fouillat, H. Barnaby, F. Darracq, R. Briand, D. Lewis, R. D. Schrimpf

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

A design methodology to harden linear integrated circuits with respect to high dose-rate effects is presented. It takes into account the photocurrents induced within the substrate which are responsible for the major degradation of the electrical response of the circuits. This noninvasive approach can be applied to any electronic function. Laser irradiation is used to validate the technique, so that very high levels of dose rates can be experimentally simulated.

Original language	English (US)
Pages (from-to)	1468-1473
Number of pages	6
Journal	IEEE Transactions on Nuclear Science
Volume	49 III
Issue number	3
DOIs	https://doi.org/10.1109/TNS.2002.1039685
State	Published - Jun 2002
Externally published	Yes

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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10.1109/TNS.2002.1039685

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AU - Fouillat, P.

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AU - Darracq, F.

AU - Briand, R.

AU - Lewis, D.

AU - Schrimpf, R. D.

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Evaluation of a design methodology dedicated to dose-rate-hardened linear integrated circuits

Abstract

ASJC Scopus subject areas

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