Evaluation of 1.5-T Cell Flash Memory Total Ionizing Dose Response

Lawrence T. Clark, Keith Holbert, James W. Adams, Harshad Navale, Blake C. Anderson

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

Flash memory is an essential part of systems used in harsh environments, experienced by both terrestrial and aerospace TID applications. This paper presents studies of COTS flash memory TID hardness. While there is substantial literature on flash memory TID response, this work focuses for the first time on 1.5 transistor per cell flash memory. The experimental results show hardness varying from about 100 krad(Si) to over 250 krad(Si) depending on the usage model. We explore the circuit and device aspects of the results, based on the extensive reliability literature for this flash memory type. Failure modes indicate both device damage and circuit marginalities. Sector erase failure limits, but read only operation allows TID exceeding 200 krad(Si). The failures are analyzed by type.

Original languageEnglish (US)
Article number7348775
Pages (from-to)2431-2439
Number of pages9
JournalIEEE Transactions on Nuclear Science
Volume62
Issue number6
DOIs
StatePublished - Dec 1 2015

Keywords

  • Flash memory
  • total ionizing dose

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Nuclear Energy and Engineering
  • Nuclear and High Energy Physics

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