Evaluation of 1.5-T Cell Flash Memory Total Ionizing Dose Response

Lawrence T. Clark; Keith Holbert; James W. Adams; Harshad Navale; Blake C. Anderson

doi:10.1109/TNS.2015.2488539

Evaluation of 1.5-T Cell Flash Memory Total Ionizing Dose Response

Lawrence T. Clark, Keith Holbert, James W. Adams, Harshad Navale, Blake C. Anderson

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Flash memory is an essential part of systems used in harsh environments, experienced by both terrestrial and aerospace TID applications. This paper presents studies of COTS flash memory TID hardness. While there is substantial literature on flash memory TID response, this work focuses for the first time on 1.5 transistor per cell flash memory. The experimental results show hardness varying from about 100 krad(Si) to over 250 krad(Si) depending on the usage model. We explore the circuit and device aspects of the results, based on the extensive reliability literature for this flash memory type. Failure modes indicate both device damage and circuit marginalities. Sector erase failure limits, but read only operation allows TID exceeding 200 krad(Si). The failures are analyzed by type.

Original language	English (US)
Article number	7348775
Pages (from-to)	2431-2439
Number of pages	9
Journal	IEEE Transactions on Nuclear Science
Volume	62
Issue number	6
DOIs	https://doi.org/10.1109/TNS.2015.2488539
State	Published - Dec 2015

Keywords

Flash memory
total ionizing dose

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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10.1109/TNS.2015.2488539

Cite this

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title = "Evaluation of 1.5-T Cell Flash Memory Total Ionizing Dose Response",

abstract = "Flash memory is an essential part of systems used in harsh environments, experienced by both terrestrial and aerospace TID applications. This paper presents studies of COTS flash memory TID hardness. While there is substantial literature on flash memory TID response, this work focuses for the first time on 1.5 transistor per cell flash memory. The experimental results show hardness varying from about 100 krad(Si) to over 250 krad(Si) depending on the usage model. We explore the circuit and device aspects of the results, based on the extensive reliability literature for this flash memory type. Failure modes indicate both device damage and circuit marginalities. Sector erase failure limits, but read only operation allows TID exceeding 200 krad(Si). The failures are analyzed by type.",

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AU - Clark, Lawrence T.

AU - Holbert, Keith

AU - Adams, James W.

AU - Navale, Harshad

AU - Anderson, Blake C.

PY - 2015/12

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AB - Flash memory is an essential part of systems used in harsh environments, experienced by both terrestrial and aerospace TID applications. This paper presents studies of COTS flash memory TID hardness. While there is substantial literature on flash memory TID response, this work focuses for the first time on 1.5 transistor per cell flash memory. The experimental results show hardness varying from about 100 krad(Si) to over 250 krad(Si) depending on the usage model. We explore the circuit and device aspects of the results, based on the extensive reliability literature for this flash memory type. Failure modes indicate both device damage and circuit marginalities. Sector erase failure limits, but read only operation allows TID exceeding 200 krad(Si). The failures are analyzed by type.

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Evaluation of 1.5-T Cell Flash Memory Total Ionizing Dose Response

Abstract

Keywords

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