TY - GEN
T1 - Evaluating the Impact of and Solutions to Light-induced Degradation in Silicon Heterojunction Solar Cells
AU - Chen, Daniel
AU - Weigand, William
AU - Wright, Matthew
AU - Kim, Moonyong
AU - Shi, Jianwei
AU - Yu, Zhengshan Jason
AU - Stefani, Bruno Vicari
AU - Soeriyadi, Anastasia
AU - Holman, Zachary
AU - Hallam, Brett
N1 - Funding Information:
V. ACKNOWLEDGEMENTS Work at UNSW has been supported by the Australian Government through the Australian Renewable Energy Agency (ARENA) (ARENA 1-A060 and RND005) and the Australian Centre for Advanced Photovoltaics (ACAP, 1-SRI001), and the Australian Research Council (DE170100620). The views expressed herein are not necessarily the views of the Australian Government, and the Australian Government does not accept responsibility for any information or advice contained herein. Daniel Chen would like to acknowledge the support and contribution of the Australian Commonwealth Government through the Australian Government Research Training Program Scholarship. The authors would like to thank Duc Huy Dao and the members of the UNSW SIRF Processing team for sample preparation. The authors would also like to thank the commercial partners of the ARENA 1-A060 advanced hydrogenation project and the UK Institution of Engineering and Technology (IET) for their funding support for this work through the A.F. Harvey Engineering Prize.
PY - 2019/6
Y1 - 2019/6
N2 - Silicon heterojunction (SHJ) solar cells have recently seen a boost in popularity sparked from their high efficiency capabilities. In order to reduce cost, some studies have demonstrated the potential of p-type wafers as an alternative base material. However, very few studies have investigated the existence and influence of light-induced degradation (LID) on SHJ solar cells, a problem which has been a significant hurdle for conventional p-type devices. In this work, we first identify the presence of and severity of LID in SHJ devices. A modified UNSW advanced hydrogenation process suitable for low-temperature SHJ fabrication is used to passivate any defects responsible for LID. We demonstrate efficiency enhancements of up to 2.2%abs resulting in stable p-type Cz SHJ solar cell efficiencies of 20.6%.
AB - Silicon heterojunction (SHJ) solar cells have recently seen a boost in popularity sparked from their high efficiency capabilities. In order to reduce cost, some studies have demonstrated the potential of p-type wafers as an alternative base material. However, very few studies have investigated the existence and influence of light-induced degradation (LID) on SHJ solar cells, a problem which has been a significant hurdle for conventional p-type devices. In this work, we first identify the presence of and severity of LID in SHJ devices. A modified UNSW advanced hydrogenation process suitable for low-temperature SHJ fabrication is used to passivate any defects responsible for LID. We demonstrate efficiency enhancements of up to 2.2%abs resulting in stable p-type Cz SHJ solar cell efficiencies of 20.6%.
KW - boron-oxygen defect
KW - hydrogenation
KW - passivation
KW - silicon heterojunction
UR - http://www.scopus.com/inward/record.url?scp=85081628135&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85081628135&partnerID=8YFLogxK
U2 - 10.1109/PVSC40753.2019.8980779
DO - 10.1109/PVSC40753.2019.8980779
M3 - Conference contribution
AN - SCOPUS:85081628135
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 1099
EP - 1103
BT - 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 46th IEEE Photovoltaic Specialists Conference, PVSC 2019
Y2 - 16 June 2019 through 21 June 2019
ER -