Error estimated driven anisotropic mesh refinement for three-dimensional diffusion simulation

W. Wessner; C. Heitzinger; A. Hössinger; S. Selberherr

doi:10.1109/SISPAD.2003.1233649

Error estimated driven anisotropic mesh refinement for three-dimensional diffusion simulation

W. Wessner, C. Heitzinger, A. Hössinger, S. Selberherr

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Scopus citations

Abstract

We present a computational method for locally adapted conformal anisotropic tetrahedral mesh refinement. The element size is determined by an anisotropy function which is governed by an error estimation driven ruler according to an adjustable maximum error. Anisotropic structures are taken into account to reduce the amount of elements compared to strict isotropic refinement. The spatial resolution in three-dimensional unstructured tetrahedral meshes for diffusion simulation can be dynamically increased.

Original language	English (US)
Title of host publication	SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	109-112
Number of pages	4
ISBN (Electronic)	0780378261
DOIs	https://doi.org/10.1109/SISPAD.2003.1233649
State	Published - 2003
Externally published	Yes
Event	2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003 - Boston, United States Duration: Sep 3 2003 → Sep 5 2003

Publication series

Name	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Volume	2003-January

Other

Other	2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003
Country/Territory	United States
City	Boston
Period	9/3/03 → 9/5/03

Keywords

Anisotropic magnetoresistance
Computational modeling
Error analysis
Extraterrestrial measurements
Microelectronics
Physics
Refining
Shape control
Spatial resolution
Telephony

ASJC Scopus subject areas

Electrical and Electronic Engineering
Computer Science Applications
Modeling and Simulation

Access to Document

10.1109/SISPAD.2003.1233649

Cite this

Wessner, W., Heitzinger, C., Hössinger, A., & Selberherr, S. (2003). Error estimated driven anisotropic mesh refinement for three-dimensional diffusion simulation. In SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices (pp. 109-112). Article 1233649 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD; Vol. 2003-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SISPAD.2003.1233649

Error estimated driven anisotropic mesh refinement for three-dimensional diffusion simulation. / Wessner, W.; Heitzinger, C.; Hössinger, A. et al.
SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices. Institute of Electrical and Electronics Engineers Inc., 2003. p. 109-112 1233649 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD; Vol. 2003-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Wessner, W, Heitzinger, C, Hössinger, A & Selberherr, S 2003, Error estimated driven anisotropic mesh refinement for three-dimensional diffusion simulation. in SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices., 1233649, International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, vol. 2003-January, Institute of Electrical and Electronics Engineers Inc., pp. 109-112, 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003, Boston, United States, 9/3/03. https://doi.org/10.1109/SISPAD.2003.1233649

Wessner W, Heitzinger C, Hössinger A, Selberherr S. Error estimated driven anisotropic mesh refinement for three-dimensional diffusion simulation. In SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices. Institute of Electrical and Electronics Engineers Inc. 2003. p. 109-112. 1233649. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). doi: 10.1109/SISPAD.2003.1233649

Wessner, W. ; Heitzinger, C. ; Hössinger, A. et al. / Error estimated driven anisotropic mesh refinement for three-dimensional diffusion simulation. SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices. Institute of Electrical and Electronics Engineers Inc., 2003. pp. 109-112 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

@inproceedings{ea5a5733f5af4851938f8e65ace5617d,

title = "Error estimated driven anisotropic mesh refinement for three-dimensional diffusion simulation",

abstract = "We present a computational method for locally adapted conformal anisotropic tetrahedral mesh refinement. The element size is determined by an anisotropy function which is governed by an error estimation driven ruler according to an adjustable maximum error. Anisotropic structures are taken into account to reduce the amount of elements compared to strict isotropic refinement. The spatial resolution in three-dimensional unstructured tetrahedral meshes for diffusion simulation can be dynamically increased.",

keywords = "Anisotropic magnetoresistance, Computational modeling, Error analysis, Extraterrestrial measurements, Microelectronics, Physics, Refining, Shape control, Spatial resolution, Telephony",

author = "W. Wessner and C. Heitzinger and A. H{\"o}ssinger and S. Selberherr",

note = "Publisher Copyright: {\textcopyright} 2003 IEEE.; 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003 ; Conference date: 03-09-2003 Through 05-09-2003",

year = "2003",

doi = "10.1109/SISPAD.2003.1233649",

language = "English (US)",

series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "109--112",

booktitle = "SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices",

}

TY - GEN

T1 - Error estimated driven anisotropic mesh refinement for three-dimensional diffusion simulation

AU - Wessner, W.

AU - Heitzinger, C.

AU - Hössinger, A.

AU - Selberherr, S.

PY - 2003

Y1 - 2003

N2 - We present a computational method for locally adapted conformal anisotropic tetrahedral mesh refinement. The element size is determined by an anisotropy function which is governed by an error estimation driven ruler according to an adjustable maximum error. Anisotropic structures are taken into account to reduce the amount of elements compared to strict isotropic refinement. The spatial resolution in three-dimensional unstructured tetrahedral meshes for diffusion simulation can be dynamically increased.

AB - We present a computational method for locally adapted conformal anisotropic tetrahedral mesh refinement. The element size is determined by an anisotropy function which is governed by an error estimation driven ruler according to an adjustable maximum error. Anisotropic structures are taken into account to reduce the amount of elements compared to strict isotropic refinement. The spatial resolution in three-dimensional unstructured tetrahedral meshes for diffusion simulation can be dynamically increased.

KW - Anisotropic magnetoresistance

KW - Computational modeling

KW - Error analysis

KW - Extraterrestrial measurements

KW - Microelectronics

KW - Physics

KW - Refining

KW - Shape control

KW - Spatial resolution

KW - Telephony

UR - http://www.scopus.com/inward/record.url?scp=33748335331&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33748335331&partnerID=8YFLogxK

U2 - 10.1109/SISPAD.2003.1233649

DO - 10.1109/SISPAD.2003.1233649

M3 - Conference contribution

AN - SCOPUS:33748335331

T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

SP - 109

EP - 112

BT - SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003

Y2 - 3 September 2003 through 5 September 2003

ER -

Error estimated driven anisotropic mesh refinement for three-dimensional diffusion simulation

Abstract

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Keywords

ASJC Scopus subject areas

Access to Document

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