Erratum: High electron mobility in modulation-doped GaxIn 1-xAs/AIyIn1-xAs heterostructures with highly strained AlInAs grown by molecular beam epitaxy (Semiconductor Science and Technology (1990) 5 (590-595))

Y. H. Zhang, L. Tapfer, K. Ploog

Research output: Contribution to journal › Comment/debate › peer-review

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