Erratum: High electron mobility in modulation-doped GaxIn 1-xAs/AIyIn1-xAs heterostructures with highly strained AlInAs grown by molecular beam epitaxy (Semiconductor Science and Technology (1990) 5 (590-595))

Yong-Hang Zhang, L. Tapfer, K. Ploog

Research output: Contribution to journalComment/debate

Original languageEnglish (US)
Article number529
Number of pages1
JournalSemiconductor Science and Technology
Volume5
Issue number7
DOIs
StatePublished - Dec 1 1990
Externally publishedYes

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Electron mobility
electron mobility
Molecular beam epitaxy
Heterojunctions
molecular beam epitaxy
Modulation
Semiconductor materials
modulation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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title = "Erratum: High electron mobility in modulation-doped GaxIn 1-xAs/AIyIn1-xAs heterostructures with highly strained AlInAs grown by molecular beam epitaxy (Semiconductor Science and Technology (1990) 5 (590-595))",
author = "Yong-Hang Zhang and L. Tapfer and K. Ploog",
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AU - Ploog, K.

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JO - Semiconductor Science and Technology

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