Erratum

Electrical study of Shottky barriers on atomically clean GaAs(110) surfaces (Physical Review B (1986), 34, 2 (1329))

Nathan Newman, M. Van Schilfgaarde, T. Kendelewicz, M. D. Williams, W. E. Spicer

Research output: Contribution to journalArticle

Original languageEnglish (US)
Pages (from-to)1329
Number of pages1
JournalPhysical Review B
Volume34
Issue number2
DOIs
StatePublished - 1986
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Erratum : Electrical study of Shottky barriers on atomically clean GaAs(110) surfaces (Physical Review B (1986), 34, 2 (1329)). / Newman, Nathan; Van Schilfgaarde, M.; Kendelewicz, T.; Williams, M. D.; Spicer, W. E.

In: Physical Review B, Vol. 34, No. 2, 1986, p. 1329.

Research output: Contribution to journalArticle

Newman, Nathan ; Van Schilfgaarde, M. ; Kendelewicz, T. ; Williams, M. D. ; Spicer, W. E. / Erratum : Electrical study of Shottky barriers on atomically clean GaAs(110) surfaces (Physical Review B (1986), 34, 2 (1329)). In: Physical Review B. 1986 ; Vol. 34, No. 2. pp. 1329.
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