Erratum

Continuous in situ X-ray reflectivity investigation on epitaxial growth of InGaN by metalorganic vapor phase epitaxy (Journal of Crystal Growth (2014) 407 (68-73))

Guangxu Ju, Shingo Fuchi, Masao Tabuchi, Hiroshi Amanoa, Yoshikazu Takeda

Research output: Contribution to journalComment/debate

Original languageEnglish (US)
Number of pages1
JournalJournal of Crystal Growth
Volume418
DOIs
StatePublished - May 15 2015
Externally publishedYes

Fingerprint

Metallorganic vapor phase epitaxy
Epitaxial growth
Crystal growth
vapor phase epitaxy
crystal growth
reflectance
X rays
x rays

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Erratum : Continuous in situ X-ray reflectivity investigation on epitaxial growth of InGaN by metalorganic vapor phase epitaxy (Journal of Crystal Growth (2014) 407 (68-73)). / Ju, Guangxu; Fuchi, Shingo; Tabuchi, Masao; Amanoa, Hiroshi; Takeda, Yoshikazu.

In: Journal of Crystal Growth, Vol. 418, 15.05.2015.

Research output: Contribution to journalComment/debate

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author = "Guangxu Ju and Shingo Fuchi and Masao Tabuchi and Hiroshi Amanoa and Yoshikazu Takeda",
year = "2015",
month = "5",
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AU - Tabuchi, Masao

AU - Amanoa, Hiroshi

AU - Takeda, Yoshikazu

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VL - 418

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

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