Epitaxy of light emitting SiGeSn materials using novel precursors

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Significant advances have been achieved in the development and applications of Si-Ge-Sn materials over the past few years, with several groups demonstrating high performance optoelectronic devices with characteristics beyond those achievable with pure Ge. [1-10]

Original languageEnglish (US)
Title of host publication2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
PublisherIEEE Computer Society
Pages143-144
Number of pages2
ISBN (Print)9781479954285
DOIs
StatePublished - 2014
Event7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 - Singapore, Singapore
Duration: Jun 2 2014Jun 4 2014

Other

Other7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
CountrySingapore
CitySingapore
Period6/2/146/4/14

Fingerprint

Epitaxial growth
Optoelectronic devices

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Kouvetakis, J., & Menendez, J. (2014). Epitaxy of light emitting SiGeSn materials using novel precursors. In 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 (pp. 143-144). [6874700] IEEE Computer Society. https://doi.org/10.1109/ISTDM.2014.6874700

Epitaxy of light emitting SiGeSn materials using novel precursors. / Kouvetakis, John; Menendez, Jose.

2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. IEEE Computer Society, 2014. p. 143-144 6874700.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kouvetakis, J & Menendez, J 2014, Epitaxy of light emitting SiGeSn materials using novel precursors. in 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014., 6874700, IEEE Computer Society, pp. 143-144, 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014, Singapore, Singapore, 6/2/14. https://doi.org/10.1109/ISTDM.2014.6874700
Kouvetakis J, Menendez J. Epitaxy of light emitting SiGeSn materials using novel precursors. In 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. IEEE Computer Society. 2014. p. 143-144. 6874700 https://doi.org/10.1109/ISTDM.2014.6874700
Kouvetakis, John ; Menendez, Jose. / Epitaxy of light emitting SiGeSn materials using novel precursors. 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. IEEE Computer Society, 2014. pp. 143-144
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