TY - GEN
T1 - Epitaxy of light emitting SiGeSn materials using novel precursors
AU - Kouvetakis, John
AU - Menendez, Jose
PY - 2014/1/1
Y1 - 2014/1/1
N2 - Significant advances have been achieved in the development and applications of Si-Ge-Sn materials over the past few years, with several groups demonstrating high performance optoelectronic devices with characteristics beyond those achievable with pure Ge. [1-10]
AB - Significant advances have been achieved in the development and applications of Si-Ge-Sn materials over the past few years, with several groups demonstrating high performance optoelectronic devices with characteristics beyond those achievable with pure Ge. [1-10]
UR - http://www.scopus.com/inward/record.url?scp=84906689015&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84906689015&partnerID=8YFLogxK
U2 - 10.1109/ISTDM.2014.6874700
DO - 10.1109/ISTDM.2014.6874700
M3 - Conference contribution
AN - SCOPUS:84906689015
SN - 9781479954285
T3 - 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
SP - 143
EP - 144
BT - 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
PB - IEEE Computer Society
T2 - 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
Y2 - 2 June 2014 through 4 June 2014
ER -