Epitaxy of light emitting SiGeSn materials using novel precursors

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Significant advances have been achieved in the development and applications of Si-Ge-Sn materials over the past few years, with several groups demonstrating high performance optoelectronic devices with characteristics beyond those achievable with pure Ge. [1-10]

Original languageEnglish (US)
Title of host publication2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
PublisherIEEE Computer Society
Pages143-144
Number of pages2
ISBN (Print)9781479954285
DOIs
StatePublished - Jan 1 2014
Event7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 - Singapore, Singapore
Duration: Jun 2 2014Jun 4 2014

Publication series

Name2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014

Other

Other7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014
CountrySingapore
CitySingapore
Period6/2/146/4/14

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Kouvetakis, J., & Menendez, J. (2014). Epitaxy of light emitting SiGeSn materials using novel precursors. In 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 (pp. 143-144). [6874700] (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014). IEEE Computer Society. https://doi.org/10.1109/ISTDM.2014.6874700