Epitaxial semimetallic Hf xZr 1-xB 2 templates for optoelectronic integration on silicon

Radek Roucka, YuJin An, Andrew Chizmeshya, John Tolle, John Kouvetakis, Vijay R. D'Costa, Jose Menendez, Peter Crozier

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Abstract

High quality heteroepitaxial Hfx Zr1-x B2 (x=0-1) buffers were grown directly on Si(111). The compositional dependence of the film structure and ab initio elastic constants were used to show that hexagonal Hfx Zr1-x B2 possess tensile in-plane strain (0.5%) as grown. High quality Hf B2 films were also grown on strain compensating Zr B2 -buffered Si(111). Initial reflectivity measurements of thick Zr B2 films agree with first principles calculations which predict that the reflectivity of Hf B2 increases by 20% relative to Zr B2 in the 2-8 eV range. These tunable structural, thermoelastic, and optical properties suggest that Hfx Zr1-x B2 templates should be suitable for broad integration of III nitrides with Si.

Original languageEnglish (US)
Article number242110
JournalApplied Physics Letters
Volume89
Issue number24
DOIs
StatePublished - Dec 29 2006

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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