Group III nitride materials from the (In, Al, Ga) N family are of great interest for devices including ultraviolet and visible (UV-VIS) wavelength light emitting diodes (LEDs) and LASERs, which are predecited to be the main light sources in application such as data storage, communications, measurement and medical inspection, and solid-state lighting and display. Additionally, such materials are useful in power electronics. typically the materials used to form such devices are grown on substrates such as sapphire and a-SiC(001). However, substrate issues, including lattice mismatch and different coefficients of thermal expansion (CTEs), pose problems in development of sufficiently high quality III-N materials. Existing techniques that allow growth of higher quality materials are complex and costly to implement.To overcome these limitations, researchers at ASU have developed an epitaxial Hafnium Zirconium Boride buffer layer that bridges the properites os Silicon and III-N maeterials and allowed the growth of high quality III-N materials and devices on large area, low cost and widely available substrates such as Silicon.
|Original language||English (US)|
|State||Published - Oct 1 2006|