Epitaxial Semi-Metallic Templates for Integration of III-Nitride Materials with Silicon

John Kouvetakis (Inventor)

Research output: Patent

Abstract

Group III nitride materials from the (In, Al, Ga) N family are of great interest for devices including ultraviolet and visible (UV-VIS) wavelength light emitting diodes (LEDs) and LASERs, which are predecited to be the main light sources in application such as data storage, communications, measurement and medical inspection, and solid-state lighting and display. Additionally, such materials are useful in power electronics. typically the materials used to form such devices are grown on substrates such as sapphire and a-SiC(001). However, substrate issues, including lattice mismatch and different coefficients of thermal expansion (CTEs), pose problems in development of sufficiently high quality III-N materials. Existing techniques that allow growth of higher quality materials are complex and costly to implement.To overcome these limitations, researchers at ASU have developed an epitaxial Hafnium Zirconium Boride buffer layer that bridges the properites os Silicon and III-N maeterials and allowed the growth of high quality III-N materials and devices on large area, low cost and widely available substrates such as Silicon.
Original languageEnglish (US)
StatePublished - Oct 1 2006

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nitrides
templates
silicon
borides
hafnium
data storage
illuminating
inspection
thermal expansion
light sources
sapphire
light emitting diodes
buffers
communication
solid state
coefficients
electronics
wavelengths

Cite this

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abstract = "Group III nitride materials from the (In, Al, Ga) N family are of great interest for devices including ultraviolet and visible (UV-VIS) wavelength light emitting diodes (LEDs) and LASERs, which are predecited to be the main light sources in application such as data storage, communications, measurement and medical inspection, and solid-state lighting and display. Additionally, such materials are useful in power electronics. typically the materials used to form such devices are grown on substrates such as sapphire and a-SiC(001). However, substrate issues, including lattice mismatch and different coefficients of thermal expansion (CTEs), pose problems in development of sufficiently high quality III-N materials. Existing techniques that allow growth of higher quality materials are complex and costly to implement.To overcome these limitations, researchers at ASU have developed an epitaxial Hafnium Zirconium Boride buffer layer that bridges the properites os Silicon and III-N maeterials and allowed the growth of high quality III-N materials and devices on large area, low cost and widely available substrates such as Silicon.",
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AB - Group III nitride materials from the (In, Al, Ga) N family are of great interest for devices including ultraviolet and visible (UV-VIS) wavelength light emitting diodes (LEDs) and LASERs, which are predecited to be the main light sources in application such as data storage, communications, measurement and medical inspection, and solid-state lighting and display. Additionally, such materials are useful in power electronics. typically the materials used to form such devices are grown on substrates such as sapphire and a-SiC(001). However, substrate issues, including lattice mismatch and different coefficients of thermal expansion (CTEs), pose problems in development of sufficiently high quality III-N materials. Existing techniques that allow growth of higher quality materials are complex and costly to implement.To overcome these limitations, researchers at ASU have developed an epitaxial Hafnium Zirconium Boride buffer layer that bridges the properites os Silicon and III-N maeterials and allowed the growth of high quality III-N materials and devices on large area, low cost and widely available substrates such as Silicon.

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