TY - JOUR
T1 - Epitaxial Oxides on Glass
T2 - A Platform for Integrated Oxide Devices
AU - Ortmann, J. Elliott
AU - McCartney, Martha R.
AU - Posadas, Agham
AU - Smith, David J.
AU - Demkov, Alexander A.
N1 - Funding Information:
J.E.O. is grateful for the generous support of the National Science Foundation Graduate Research Fellowship under Grant No. DGE-1610403. The work at UT Austin was supported by the Air Force Office of Scientific Research under Grant No. FA9550-18-1-0053. D.J.S. and M.R.M. acknowledge use of facilities in the John M. Crowley Center for High Resolution Electron Microscopy at Arizona State University.
Funding Information:
J.E.O. is grateful for the generous support of the National Science Foundation Graduate Research Fellowship under Grant No. DGE-1610403. The work at UT Austin was supported by the Air Force Office of Scientific Research under Grant No. FA9550-18-1-0053. D.J.S. and M.R.M. acknowledge use of facilities in the John M. Crowley Center for High Resolution Electron Microscopy at Arizona State University.
PY - 2019/12/27
Y1 - 2019/12/27
N2 - The fabrication of epitaxial, ultrathin SrTiO3 (STO) on thick SiO2 without the need for complicated wafer-bonding processes has been demonstrated. The resulting transition metal oxide (TMO)-on-glass layer stack is analogous to traditional silicon-on-insulator (SOI) wafers, where the crystalline device silicon layer of SOI has been replaced by a crystalline functional TMO layer. Fabrication starts with ultrathin body SOI on which crystalline STO is grown epitaxially by molecular beam epitaxy. The device silicon layer is subsequently fully oxidized by ex situ high-temperature dry O2 annealing, as confirmed by X-ray photoelectron spectroscopy, X-ray reflectivity, and high-resolution electron microscopy. STO maintains its epitaxial registry to the carrier silicon substrate after annealing, and no evidence for degradation of the STO crystalline quality as a result of the TMO-on-glass fabrication process is observed. The ease of fabricating the TMO-on-glass platform without the need for wafer bonding will enable rapid progress in the development of state-of-the-art TMO-based electronic and photonic devices.
AB - The fabrication of epitaxial, ultrathin SrTiO3 (STO) on thick SiO2 without the need for complicated wafer-bonding processes has been demonstrated. The resulting transition metal oxide (TMO)-on-glass layer stack is analogous to traditional silicon-on-insulator (SOI) wafers, where the crystalline device silicon layer of SOI has been replaced by a crystalline functional TMO layer. Fabrication starts with ultrathin body SOI on which crystalline STO is grown epitaxially by molecular beam epitaxy. The device silicon layer is subsequently fully oxidized by ex situ high-temperature dry O2 annealing, as confirmed by X-ray photoelectron spectroscopy, X-ray reflectivity, and high-resolution electron microscopy. STO maintains its epitaxial registry to the carrier silicon substrate after annealing, and no evidence for degradation of the STO crystalline quality as a result of the TMO-on-glass fabrication process is observed. The ease of fabricating the TMO-on-glass platform without the need for wafer bonding will enable rapid progress in the development of state-of-the-art TMO-based electronic and photonic devices.
KW - MBE
KW - SOI
KW - STO
KW - integrated photonics
KW - thin film
KW - transition metal oxide
UR - http://www.scopus.com/inward/record.url?scp=85075951597&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85075951597&partnerID=8YFLogxK
U2 - 10.1021/acsanm.9b01778
DO - 10.1021/acsanm.9b01778
M3 - Article
AN - SCOPUS:85075951597
VL - 2
SP - 7713
EP - 7718
JO - ACS Applied Nano Materials
JF - ACS Applied Nano Materials
SN - 2574-0970
IS - 12
ER -