Abstract
The fabrication of epitaxial, ultrathin SrTiO3 (STO) on thick SiO2 without the need for complicated wafer-bonding processes has been demonstrated. The resulting transition metal oxide (TMO)-on-glass layer stack is analogous to traditional silicon-on-insulator (SOI) wafers, where the crystalline device silicon layer of SOI has been replaced by a crystalline functional TMO layer. Fabrication starts with ultrathin body SOI on which crystalline STO is grown epitaxially by molecular beam epitaxy. The device silicon layer is subsequently fully oxidized by ex situ high-temperature dry O2 annealing, as confirmed by X-ray photoelectron spectroscopy, X-ray reflectivity, and high-resolution electron microscopy. STO maintains its epitaxial registry to the carrier silicon substrate after annealing, and no evidence for degradation of the STO crystalline quality as a result of the TMO-on-glass fabrication process is observed. The ease of fabricating the TMO-on-glass platform without the need for wafer bonding will enable rapid progress in the development of state-of-the-art TMO-based electronic and photonic devices.
| Original language | English (US) |
|---|---|
| Journal | ACS Applied Nano Materials |
| DOIs | |
| State | Accepted/In press - Jan 1 2019 |
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Keywords
- integrated photonics
- MBE
- SOI
- STO
- thin film
- transition metal oxide
ASJC Scopus subject areas
- Materials Science(all)
Cite this
Epitaxial Oxides on Glass : A Platform for Integrated Oxide Devices. / Ortmann, J. Elliott; McCartney, Martha R.; Posadas, Agham; Smith, David; Demkov, Alexander A.
In: ACS Applied Nano Materials, 01.01.2019.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Epitaxial Oxides on Glass
T2 - A Platform for Integrated Oxide Devices
AU - Ortmann, J. Elliott
AU - McCartney, Martha R.
AU - Posadas, Agham
AU - Smith, David
AU - Demkov, Alexander A.
PY - 2019/1/1
Y1 - 2019/1/1
N2 - The fabrication of epitaxial, ultrathin SrTiO3 (STO) on thick SiO2 without the need for complicated wafer-bonding processes has been demonstrated. The resulting transition metal oxide (TMO)-on-glass layer stack is analogous to traditional silicon-on-insulator (SOI) wafers, where the crystalline device silicon layer of SOI has been replaced by a crystalline functional TMO layer. Fabrication starts with ultrathin body SOI on which crystalline STO is grown epitaxially by molecular beam epitaxy. The device silicon layer is subsequently fully oxidized by ex situ high-temperature dry O2 annealing, as confirmed by X-ray photoelectron spectroscopy, X-ray reflectivity, and high-resolution electron microscopy. STO maintains its epitaxial registry to the carrier silicon substrate after annealing, and no evidence for degradation of the STO crystalline quality as a result of the TMO-on-glass fabrication process is observed. The ease of fabricating the TMO-on-glass platform without the need for wafer bonding will enable rapid progress in the development of state-of-the-art TMO-based electronic and photonic devices.
AB - The fabrication of epitaxial, ultrathin SrTiO3 (STO) on thick SiO2 without the need for complicated wafer-bonding processes has been demonstrated. The resulting transition metal oxide (TMO)-on-glass layer stack is analogous to traditional silicon-on-insulator (SOI) wafers, where the crystalline device silicon layer of SOI has been replaced by a crystalline functional TMO layer. Fabrication starts with ultrathin body SOI on which crystalline STO is grown epitaxially by molecular beam epitaxy. The device silicon layer is subsequently fully oxidized by ex situ high-temperature dry O2 annealing, as confirmed by X-ray photoelectron spectroscopy, X-ray reflectivity, and high-resolution electron microscopy. STO maintains its epitaxial registry to the carrier silicon substrate after annealing, and no evidence for degradation of the STO crystalline quality as a result of the TMO-on-glass fabrication process is observed. The ease of fabricating the TMO-on-glass platform without the need for wafer bonding will enable rapid progress in the development of state-of-the-art TMO-based electronic and photonic devices.
KW - integrated photonics
KW - MBE
KW - SOI
KW - STO
KW - thin film
KW - transition metal oxide
UR - http://www.scopus.com/inward/record.url?scp=85075951597&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85075951597&partnerID=8YFLogxK
U2 - 10.1021/acsanm.9b01778
DO - 10.1021/acsanm.9b01778
M3 - Article
AN - SCOPUS:85075951597
JO - ACS Applied Nano Materials
JF - ACS Applied Nano Materials
SN - 2574-0970
ER -