Epitaxial MgO on Si(001) for Y-Ba-Cu-O thin-film growth by pulsed laser deposition

D. K. Fork, Fernando Ponce, J. C. Tramontana, T. H. Geballe

Research output: Contribution to journalArticle

235 Citations (Scopus)

Abstract

Epitaxial MgO thin films were grown on Si(001) by pulsed laser deposition. In spite of a large (-22.5%) lattice mismatch, epitaxy occurs with alignment of all crystallographic axes. Epitaxial quality and deposition rate are both sensitive to temperature and oxygen pressure. We believe this is the first demonstration of epitaxial MgO on Si. We employ MgO intermediate layers for superconducting epitaxial YBa2Cu3O7-δ/ BaTiO3 thin films on Si with a critical current density of 6.7×105 A/cm2 at 77 K.

Original languageEnglish (US)
Pages (from-to)2294-2296
Number of pages3
JournalApplied Physics Letters
Volume58
Issue number20
DOIs
StatePublished - 1991
Externally publishedYes

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pulsed laser deposition
thin films
epitaxy
critical current
alignment
current density
oxygen
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Epitaxial MgO on Si(001) for Y-Ba-Cu-O thin-film growth by pulsed laser deposition. / Fork, D. K.; Ponce, Fernando; Tramontana, J. C.; Geballe, T. H.

In: Applied Physics Letters, Vol. 58, No. 20, 1991, p. 2294-2296.

Research output: Contribution to journalArticle

Fork, D. K. ; Ponce, Fernando ; Tramontana, J. C. ; Geballe, T. H. / Epitaxial MgO on Si(001) for Y-Ba-Cu-O thin-film growth by pulsed laser deposition. In: Applied Physics Letters. 1991 ; Vol. 58, No. 20. pp. 2294-2296.
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