Epitaxial lateral overgrowth of (11 2- 2) semipolar GaN on (1 1- 00) m -plane sapphire by metalorganic chemical vapor deposition

X. Ni, Ü Özgür, A. A. Baski, H. Morko̧, Lin Zhou, David Smith, C. A. Tran

Research output: Contribution to journalArticle

79 Citations (Scopus)

Abstract

The authors report the growth of semipolar (11 2- 2) GaN films on nominally on-axis (10 1- 0) m -plane sapphire substrates using metal organic chemical vapor deposition. High-resolution x-ray diffraction (XRD) results indicate a preferred (11 2- 2) GaN orientation. Moreover, epitaxial lateral overgrowth (ELO) of GaN was carried out on the (11 2- 2) oriented GaN templates. When the ELO stripes were aligned along [11 2- 0]sapphire, the Ga-polar wings were inclined by 32° with respect to the substrate plane with smooth extended nonpolar a -plane GaN surfaces and polar c -plane GaN growth fronts. When compared with the template, the on-axis and off-axis XRD rocking curves indicated significant improvement in the crystalline quality by ELO for this mask orientation (on-axis 1700 arc sec for the template, 380 arc sec for the ELO sample, when rocked toward the GaN m axis), as verified by transmission electron microscopy (TEM). For growth mask stripes aligned along [0001]sapphire with GaN m -plane as growth fronts, the surface was composed of two 10 1- 1 planes making a 26° angle with the substrate plane. For this mask orientation XRD and TEM showed no improvement in the crystalline quality by ELO when compared to the non-ELO template.

Original languageEnglish (US)
Article number182109
JournalApplied Physics Letters
Volume90
Issue number18
DOIs
StatePublished - 2007
Externally publishedYes

Fingerprint

metalorganic chemical vapor deposition
sapphire
templates
x ray diffraction
masks
arcs
transmission electron microscopy
wings
high resolution
curves

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Epitaxial lateral overgrowth of (11 2- 2) semipolar GaN on (1 1- 00) m -plane sapphire by metalorganic chemical vapor deposition. / Ni, X.; Özgür, Ü; Baski, A. A.; Morko̧, H.; Zhou, Lin; Smith, David; Tran, C. A.

In: Applied Physics Letters, Vol. 90, No. 18, 182109, 2007.

Research output: Contribution to journalArticle

@article{a117cf915f5f41fea3c49a284015ec18,
title = "Epitaxial lateral overgrowth of (11 2- 2) semipolar GaN on (1 1- 00) m -plane sapphire by metalorganic chemical vapor deposition",
abstract = "The authors report the growth of semipolar (11 2- 2) GaN films on nominally on-axis (10 1- 0) m -plane sapphire substrates using metal organic chemical vapor deposition. High-resolution x-ray diffraction (XRD) results indicate a preferred (11 2- 2) GaN orientation. Moreover, epitaxial lateral overgrowth (ELO) of GaN was carried out on the (11 2- 2) oriented GaN templates. When the ELO stripes were aligned along [11 2- 0]sapphire, the Ga-polar wings were inclined by 32° with respect to the substrate plane with smooth extended nonpolar a -plane GaN surfaces and polar c -plane GaN growth fronts. When compared with the template, the on-axis and off-axis XRD rocking curves indicated significant improvement in the crystalline quality by ELO for this mask orientation (on-axis 1700 arc sec for the template, 380 arc sec for the ELO sample, when rocked toward the GaN m axis), as verified by transmission electron microscopy (TEM). For growth mask stripes aligned along [0001]sapphire with GaN m -plane as growth fronts, the surface was composed of two 10 1- 1 planes making a 26° angle with the substrate plane. For this mask orientation XRD and TEM showed no improvement in the crystalline quality by ELO when compared to the non-ELO template.",
author = "X. Ni and {\"U} {\"O}zg{\"u}r and Baski, {A. A.} and H. Morko̧ and Lin Zhou and David Smith and Tran, {C. A.}",
year = "2007",
doi = "10.1063/1.2735558",
language = "English (US)",
volume = "90",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "18",

}

TY - JOUR

T1 - Epitaxial lateral overgrowth of (11 2- 2) semipolar GaN on (1 1- 00) m -plane sapphire by metalorganic chemical vapor deposition

AU - Ni, X.

AU - Özgür, Ü

AU - Baski, A. A.

AU - Morko̧, H.

AU - Zhou, Lin

AU - Smith, David

AU - Tran, C. A.

PY - 2007

Y1 - 2007

N2 - The authors report the growth of semipolar (11 2- 2) GaN films on nominally on-axis (10 1- 0) m -plane sapphire substrates using metal organic chemical vapor deposition. High-resolution x-ray diffraction (XRD) results indicate a preferred (11 2- 2) GaN orientation. Moreover, epitaxial lateral overgrowth (ELO) of GaN was carried out on the (11 2- 2) oriented GaN templates. When the ELO stripes were aligned along [11 2- 0]sapphire, the Ga-polar wings were inclined by 32° with respect to the substrate plane with smooth extended nonpolar a -plane GaN surfaces and polar c -plane GaN growth fronts. When compared with the template, the on-axis and off-axis XRD rocking curves indicated significant improvement in the crystalline quality by ELO for this mask orientation (on-axis 1700 arc sec for the template, 380 arc sec for the ELO sample, when rocked toward the GaN m axis), as verified by transmission electron microscopy (TEM). For growth mask stripes aligned along [0001]sapphire with GaN m -plane as growth fronts, the surface was composed of two 10 1- 1 planes making a 26° angle with the substrate plane. For this mask orientation XRD and TEM showed no improvement in the crystalline quality by ELO when compared to the non-ELO template.

AB - The authors report the growth of semipolar (11 2- 2) GaN films on nominally on-axis (10 1- 0) m -plane sapphire substrates using metal organic chemical vapor deposition. High-resolution x-ray diffraction (XRD) results indicate a preferred (11 2- 2) GaN orientation. Moreover, epitaxial lateral overgrowth (ELO) of GaN was carried out on the (11 2- 2) oriented GaN templates. When the ELO stripes were aligned along [11 2- 0]sapphire, the Ga-polar wings were inclined by 32° with respect to the substrate plane with smooth extended nonpolar a -plane GaN surfaces and polar c -plane GaN growth fronts. When compared with the template, the on-axis and off-axis XRD rocking curves indicated significant improvement in the crystalline quality by ELO for this mask orientation (on-axis 1700 arc sec for the template, 380 arc sec for the ELO sample, when rocked toward the GaN m axis), as verified by transmission electron microscopy (TEM). For growth mask stripes aligned along [0001]sapphire with GaN m -plane as growth fronts, the surface was composed of two 10 1- 1 planes making a 26° angle with the substrate plane. For this mask orientation XRD and TEM showed no improvement in the crystalline quality by ELO when compared to the non-ELO template.

UR - http://www.scopus.com/inward/record.url?scp=34247891757&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34247891757&partnerID=8YFLogxK

U2 - 10.1063/1.2735558

DO - 10.1063/1.2735558

M3 - Article

AN - SCOPUS:34247891757

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 18

M1 - 182109

ER -